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PDF ( 数据手册 , 数据表 ) 28F160C3

零件编号 28F160C3
描述 3 Volt Advanced+ Boot Block Flash Memory
制造商 Intel Corporation
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28F160C3 数据手册, 描述, 功能
www.DataSheet4U.com
Intel£ Advanced+ Boot Block Flash
Memory (C3)
28F800C3, 28F160C3, 28F320C3, 28F640C3 (x16)
Datasheet
Product Features
Flexible SmartVoltage Technology
— 2.7 V– 3.6 V Read/Program/Erase
— 12 V for Fast Production Programming
1.65 V–2.5 V or 2.7 V–3.6 V I/O Option
— Reduces Overall System Power
High Performance
— 2.7 V– 3.6 V: 70 ns Max Access Time
Optimized Architecture for Code Plus
Data Storage
— Eight 4 Kword Blocks, Top or Bottom
Parameter Boot
— Up to One Hundred-Twenty-Seven 32
Kword Blocks
— Fast Program Suspend Capability
— Fast Erase Suspend Capability
Flexible Block Locking
— Lock/Unlock Any Block
— Full Protection on Power-Up
— WP# Pin for Hardware Block Protection
Low Power Consumption
— 9 mA Typical Read
— 7 A Typical Standby with Automatic
Power Savings Feature (APS)
Extended Temperature Operation
— –40 °C to +85 °C
128-bit Protection Register
— 64 bit Unique Device Identifier
— 64 bit User Programmable OTP Cells
Extended Cycling Capability
— Minimum 100,000 Block Erase Cycles
Software
— Intel® Flash Data Integrator (FDI)
— Supports Top or Bottom Boot Storage,
Streaming Data (e.g., voice)
— Intel Basic Command Set
— Common Flash Interface (CFI)
Standard Surface Mount Packaging
— 48-Ball µBGA*/VFBGA
— 64-Ball Easy BGA Packages
— 48-Lead TSOP Package
ETOX™ VIII (0.13 µm) Flash
Technology
— 16, 32 Mbit
ETOX™ VII (0.18 µm) Flash Technology
— 16, 32, 64 Mbit
ETOX™ VI (0.25 µm) Flash Technology
— 8, 16 and 32 Mbit
The Intel® Advanced+ Book Block Flash Memory (C3) device, manufactured on Intel’s latest
0.13 µm and 0.18 µm technologies, represents a feature-rich solution for low-power applications.
The C3 device incorporates low-voltage capability (3 V read, program, and erase) with high-
speed, low-power operation. Flexible block locking allows any block to be independently locked
or unlocked. Add to this the Intel® Flash Data Integrator (FDI) software and you have a cost-
effective, flexible, monolithic code plus data storage solution. Intel® Advanced+ Boot Block Flash
Memory (C3) products will be available in 48-lead TSOP, 48-ball CSP, and 64-ball Easy BGA
packages. Additional information on this product family can be obtained by accessing the Intel®
Flash website: http://www.intel.com/design/flash.
Notice: This specification is subject to change without notice. Verify with your local Intel sales
office that you have the latest datasheet before finalizing a design.
Order Number: 290645-016
May 2003







28F160C3 pdf, 数据表
Intel£ Advanced+ Boot Block Flash Memory (C3)
www.DataSheet4U.com
2.0
2.1
2.2
Device Description
This section provides an overview of the Intel® Advanced+ Boot Block Flash Memory (C3) device
features, packaging, signal naming, and device architecture.
Product Overview
The C3 device provides high-performance asynchronous reads in package-compatible densities
with a 16 bit data bus. Individually-erasable memory blocks are optimally sized for code and data
storage. Eight 4 Kword parameter blocks are located in the boot block at either the top or bottom of
the device’s memory map. The rest of the memory array is grouped into 32 Kword main blocks.
The device supports read-array mode operations at various I/O voltages (1.8 V and 3 V) and erase
and program operations at 3 V or 12 V VPP. With the 3 V I/O option, VCC and VPP can be tied
together for a simple, ultra-low-power design. In addition to I/O voltage flexibility, the dedicated
VPP input provides complete data protection when VPP VPPLK.
The device features a 128-bit protection register enabling security techniques and data protection
schemes through a combination of factory-programmed and user-programmable OTP data
registers. Zero-latency locking/unlocking on any memory block provides instant and complete
protection for critical system code and data. Additional block lock-down capability provides
hardware protection where software commands alone cannot change the block’s protection status.
A command User Interface(CUI) serves as the interface between the system processor and internal
operation of the device. A valid command sequence issued to the CUI initiates device automation.
An internal Write State Machine (WSM) automatically executes the algorithms and timings
necessary for block erase, program, and lock-bit configuration operations.
The device offers three low-power saving features: Automatic Power Savings (APS), standby
mode, and deep power-down mode. The device automatically enters APS mode following read
cycle completion. Standby mode begins when the system deselects the flash memory by
deasserting CE#. The deep power-down mode begins when RP# is asserted, which deselects the
memory and places the outputs in a high-impedance state, producing ultra-low power savings.
Combined, these three power-savings features significantly enhanced power consumption
flexibility.
Ballout Diagram
The C3 device is available in 48-lead TSOP, 48-ball VF BGA, 48-ball µBGA, and Easy BGA
packages. (Refer to Figure 1 on page 9, Figure 3 on page 11, and Figure 4 on page 12,
respectively.)
8 Datasheet







28F160C3 equivalent, schematic
Intel£ Advanced+ Boot Block Flash Memory (C3)
www.DataSheet4U.com
Table 4. Bottom Boot Memory Map
Size
(KW)
Blk
8-Mbit
Memory
Addressing
(HEX)
32 22 78000-7FFFF
Size
(KW)
Blk
32 38
16-Mbit
Memory
Addressing
(HEX)
F8000-FFFFF
32 21 70000-77FFF
32 37 F0000-F7FFF
32 20 68000-6FFFF
32 36 E8000-EFFFF
32 19 60000-67FFF
32 35 E0000-E7FFF
... ...
...
... ...
...
32 10 18000-1FFFF
32 9 10000-17FFF
32 10 18000-1FFFF
32 9 10000-17FFF
32 8 08000-0FFFF
32 8 08000-0FFFF
4 7 07000-07FFF
4 6 06000-06FFF
4 7 07000-07FFF
4 6 06000-06FFF
4 5 05000-05FFF
4 5 05000-05FFF
4 4 04000-04FFF
4 3 03000-03FFF
4 4 04000-04FFF
4 3 03000-03FFF
4 2 02000-02FFF
4 2 02000-02FFF
4 1 01000-01FFF
4 1 01000-01FFF
4 0 00000-00FFF
4 0 00000-00FFF
Size
(KW)
Blk
32-Mbit
Memory
Addressing
(HEX)
32 70 1F8000-1FFFFF
32 69 1F0000-1F7FFF
32 68 1E8000-1EFFFF
32 67 1E0000-1E7FFF
... ...
...
32 10 18000-1FFFF
32 9 10000-17FFF
32 8 08000-0FFFF
4 7 07000-07FFF
4 6 06000-06FFF
4 5 05000-05FFF
4 4 04000-04FFF
4 3 03000-03FFF
4 2 02000-02FFF
4 1 01000-01FFF
4 0 00000-00FFF
Size
(KW)
Blk
64-Mbit Memory
Addressing
(HEX)
32 134 3F8000-3FFFFF
32 133 3F0000-3F7FFF
32 132 3E8000-3EFFFF
32 131 3E0000-3E7FFF
. ...
...
32 10
18000-1FFFF
32 9
10000-17FFF
32 8
08000-0FFFF
47
07000-07FFF
46
06000-06FFF
45
05000-05FFF
44
04000-04FFF
43
03000-03FFF
42
02000-02FFF
41
01000-01FFF
40
00000-00FFF
16 Datasheet










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