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PDF ( 数据手册 , 数据表 ) MW6S010GNR1

零件编号 MW6S010GNR1
描述 LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
制造商 Freescale Semiconductor
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MW6S010GNR1 数据手册, 描述, 功能
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class A or Class AB base station applications with frequencies
up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
Typical Two - Tone Performance at 960 MHz: VDD = 28 Volts, IDQ =
125 mA, Pout = 10 Watts PEP
Power Gain — 18 dB
Drain Efficiency — 32%
IMD — - 37 dBc
Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW
Output Power
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
www.Dat••aShOQeunea-t4CliUfhie.cipdoRUmFp
Feedback for Broadband Stability
to a Maximum of 32 VDD Operation
Integrated ESD Protection
200°C Capable Plastic Package
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Document Number: MW6S010N
Rev. 3, 5/2006
MW6S010NR1
MW6S010GNR1
450 - 1500 MHz, 10 W, 28 V
LATERAL N - CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265 - 08, STYLE 1
TO - 270- 2
PLASTIC
MW6S010NR1
CASE 1265A - 02, STYLE 1
TO - 270- 2 GULL
PLASTIC
MW6S010GNR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, +12
61.4
0.35
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Tstg - 65 to +175
TJ 200
Characteristic
Symbol
Value (1.2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 10 W PEP
RθJC
2.85
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MW6S010NR1 MW6S010GNR1
1







MW6S010GNR1 pdf, 数据表
www.DataSheet4U.comZsource
f = 980 MHz
f = 800 MHz
Zo = 25 Ω
f = 980 MHz
Zload
f = 800 MHz
VDD = 28 Vdc, IDQ = 125 mA, Pout = 10 W PEP
f
MHz
Zsource
Ω
Zload
Ω
800 3.1 + j1.9
820 2.8 + j1.7
10.1 + j2.3
8.3 + j2.5
840 2.7 + j2.2
8.2 + j3.3
860 3.1 + j3.4
9.8 + j4.8
880 3.3 + j3.8
10.6 + j5.6
900 2.9 + j3.7
9.5 + j5.5
920 2.8 + j4.4
10.1 + j5.9
940 3.0 + j4.7
11.0 + j6.4
960 3.2 + j4.9
11.8 + j6.6
980 3.6 + j5.2
12.1 + j7.1
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z source
Z load
Figure 13. Series Equivalent Source and Load Impedance — 900 MHz
MW6S010NR1 MW6S010GNR1
8
RF Device Data
Freescale Semiconductor







MW6S010GNR1 equivalent, schematic
PACKAGE DIMENSIONS
www.DataSheet4U.com
MW6S010NR1 MW6S010GNR1
16
RF Device Data
Freescale Semiconductor










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