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零件编号 | H55S1G62MFP-75 | ||
描述 | 1Gb (64Mx16bit) Mobile SDRAM | ||
制造商 | Hynix Semiconductor | ||
LOGO | |||
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1GBit MOBILE SDR SDRAMs based on 16M x 4Bank x16I/O
Specification of
1Gb (64Mx16bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 16,777,216 x16
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.2 / Jul. 2008
1
ABSOLUTE MAXIMUM RATING
Parameter
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to VSS
Voltage on VDD relative to VSS
Voltage on VDDQ relative to VSS
Short Circuit Output Current
Power Dissipation
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1Gbit (64Mx16bit) Mobile SDR Memory
H55S1G62MFP Series
Symbol
TA
TSTG
VIN, VOUT
VDD
VDDQ
IOS
PD
Rating
-30 ~ 85
-55 ~ 150
-0.3 ~ VDDQ+0.3
-0.3 ~ 2.7
-0.3 ~ 2.7
50
1
Unit
oC
oC
V
V
V
mA
W
DC OPERATING CONDITION (TA= -30 to 85oC )
Parameter
Power Supply Voltage
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
Min
Typ
Max
Unit
Note
VDD
1.7
1.8
1.95 V
1
VDDQ 1.7 1.8 1.95 V 1, 2
VIH
0.8*VDDQ
-
VDDQ+0.3
V
1, 2
VIL
-0.3
-
0.2*VDDQ
V
1, 2
Notes :
1. All Voltages are referenced to VSS = 0V
2. VDDQ must not exceed the level of VDD
AC OPERATING TEST CONDITION (TA= -30 to 85 oC, VDD = 1.8V, VSS = 0V)
Parameter
AC Input High/Low Level Voltage
Input Timing Measurement Reference Level Voltage
Input Rise/Fall Time
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
Symbol
VIH / VIL
Vtrip
tR / tF
Voutref
CL
Value
0.9*VDDQ /
0.2*VDDQ
0.5*VDDQ
1
0.5*VDDQ
Unit
V
V
ns
V
pF
Rev 1.2 / Jul. 2008
8
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1Gbit (64Mx16bit) Mobile SDR Memory
H55S1G62MFP Series
BASIC FUNCTIONAL DESCRIPTION (Continued)
Extended Mode Register
BA1 BA0 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
1 0 0 0 0 0 0 0 0 DS 0 0
PASR
DS (Driver Strength)
A6 A5
Driver Strength
0 0 Full
0 1 1/2 Strength
1 0 1/4 Strength
1 1 Reserved
PASR (Partial Array Self Refresh)
A2 A1 A0 Self Refresh Coverage
0 0 0 All Banks
0 0 1 Half of Total Bank (BA1=0 or Bank 0,1)
0 1 0 Quarter of Total Bank (BA1=BA0=0 or Bank 0)
0 1 1 Reserved
1 0 0 Reserved
1 0 1 Half of Bank 0(Bank 0 and Row Address MSB=0)
1 1 0 Quarter of Bank 0(Bank 0 and Row Address 2 MSBs=0)
1 1 1 Reserved
Rev 1.2 / Jul. 2008
16
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页数 | 30 页 | ||
下载 | [ H55S1G62MFP-75.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
H55S1G62MFP-75 | 1Gb (64Mx16bit) Mobile SDRAM | Hynix Semiconductor |
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