|
|
零件编号 | H55S1222EFP-75E | ||
描述 | 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O | ||
制造商 | Hynix Semiconductor | ||
LOGO | |||
1 Page
www.DataSheet4U.com
128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O
Specification of
128M (4Mx32bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 1,048,576 x32
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.0 / Jun. 2008
1
1128Mbit (4Mx32bit) MobwilwewS.DDaRtaSMheeemt4Uo.rcyom
H55S1222EFP Series
BALL DESCRIPTION
SYMBOL
CLK
CKE
CS
BA0, BA1
A0 ~ A11
RAS, CAS, WE
DQM0 ~ DQM3
DQ0 ~ DQ31
VDD/VSS
VDDQ/VSSQ
NC
TYPE
INPUT
INPUT
INPUT
INPUT
INPUT
INPUT
INPUT
I/O
SUPPLY
SUPPLY
-
DESCRIPTION
Clock : The system clock input. All other inputs are registered to the SDRAM on the
rising edge of CLK
Clock Enable : Controls internal clock signal and when deactivated, the SDRAM will
be one of the states among power down, suspend or self refresh
Chip Select : Enables or disables all inputs except CLK, CKE, DQM0~DQM3
Bank Address : Selects bank to be activated during RAS activity
Selects bank to be read/written during CAS activity
Row Address : RA0 ~ RA11, Column Address : CA0 ~ CA7
Auto-precharge flag : A10
Command Inputs : RAS, CAS and WE define the operation
Refer function truth table for details
Data Mask:Controls output buffers in read mode and masks input data in write
mode
Data Input/Output:Multiplexed data input/output pin
Power supply for internal circuits
Power supply for output buffers
No connection
Rev 1.0 / Jun. 2008
8
1128Mbit (4Mx32bit) MobwilwewS.DDaRtaSMheeemt4Uo.rcyom
H55S1222EFP Series
BASIC FUNCTIONAL DESCRIPTION
Mode Register
BA1 BA0 A11 A10
0000
A9
OP Code
A8 A7 A6 A5 A4 A3 A2 A1 A0
00
CAS Latency BT Burst Length
OP Code
A9
0
1
Write Mode
Burst Read and Burst Write
Burst Read and Single Write
Burst Type
A3 Burst Type
0 Sequential
1 Interleave
CAS Latency
A6 A5 A4
000
001
010
011
100
101
110
111
CAS Latency
Reserved
Reserved
2
3
Reserved
Reserved
Reserved
Reserved
Burst Length
A2 A1 A0
00 0
00 1
01 0
01 1
10 0
10 1
1 10
1 11
Burst Length
A3 = 0
A3=1
11
22
44
88
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Full page
Reserved
Rev 1.0 / Jun. 2008
16
|
|||
页数 | 30 页 | ||
下载 | [ H55S1222EFP-75E.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
H55S1222EFP-75E | 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O | Hynix Semiconductor |
H55S1222EFP-75M | 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O | Hynix Semiconductor |
零件编号 | 描述 | 制造商 |
STK15C88 | 256-Kbit (32 K x 8) PowerStore nvSRAM | Cypress Semiconductor |
NJM4556 | DUAL HIGH CURRENT OPERATIONAL AMPLIFIER | New Japan Radio |
EL1118-G | 5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
DataSheet8.cn | 2020 | 联系我们 | 搜索 | Simemap |