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零件编号 | DCR3790B42 | ||
描述 | Phase Control Thyristor | ||
制造商 | Dynex Semiconductor | ||
LOGO | |||
1 Page
DCR3790B42www.DataSheet4U.com
Phase Control Thyristor
Preliminary Information
DS5809-1.2 May 2009 (LN26739)
FEATURES
Double Side Cooling
High Surge Capability
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dV/dt*
dI/dt
4200V
3790A
53500A
1500V/µs
400A/µs
APPLICATIONS
High Power Drives
High Voltage Power Supplies
Static Switches
* Higher dV/dt selections available
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
VDRM and VRRM
V
Conditions
DCR3790B42
DCR3790B40
DCR3790B35
DCR3790B30
4200
4000
3500
3000
Tvj = -40°C to 125°C,
IDRM = IRRM = 200mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
Outline type code: B
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
(See Package Details for further information)
Fig. 1 Package outline
For example:
DCR3790B42
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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1/10
SEMICONDUCTOR
DCR3790B42
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10
Pulse Power PGM (Watts)
9 Pulse
Frequency Hz
Width us 50
100 400
8 100 150 150 150
200 150 150 125
7
500 150 150 100
1000
150
100
25
10000
20
-
-
6
Upper Limit
5 Preferred gate drive area
4
3
2
Tj = 25oC
Tj = -40oC
1 Tj = 125oC
Lower Limit
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Gate trigger current IGT, - (A)
Fig14 Gate Characteristics
1
30
Lower Limit
Upper Limit
5W
25 10W
20W
50W
100W
20 150W
-40C
15
10
5
0
0 1 2 3 4 5 6 7 8 9 10
Gate trigger current, IGT - (A)
Fig. 15 Gate characteristics
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页数 | 10 页 | ||
下载 | [ DCR3790B42.PDF 数据手册 ] |
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