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PDF ( 数据手册 , 数据表 ) N08L1618C2A

零件编号 N08L1618C2A
描述 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit
制造商 NanoAmp Solutions
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N08L1618C2A 数据手册, 描述, 功能
NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N08L1618C2A
Advance Information
www.DataSheet4U.com
8Mb Ultra-Low Power Asynchronous CMOS SRAM
512K × 16bit
Overview
Features
The N08L1618C2A is an integrated memory
device containing a 8 Mbit Static Random Access
Memory organized as 524,288 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N08L1618C2A is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 512Kb x 16 SRAMs
Product Family
• Single Wide Power Supply Range
1.65 to 2.2 Volts
• Very low standby current
0.5µA at 1.8V (Typical)
• Very low operating current
1.0mA at 1.8V and 1µs (Typical)
• Very low Page Mode operating current
0.5mA at 1.8V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.2V
• Very fast output enable access time
25ns OE access time
• Very fast Page Mode access time
tAAP = 25ns
• Automatic power down to standby mode
• TTL compatible three-state output driver
Part Number Package Type
N08L1618C2AB
48 - BGA
N08L1618C2AB2 48 - BGA Green
Operating
Power
Temperature Supply (Vcc)
Speed
Standby
Operating
Current (ISB), Current (Icc),
Typical
Typical
-40oC to +85oC
1.65V - 2.2V
70ns @ 1.8V
85ns @ 1.65V
0.5 µA
1 mA @ 1MHz
Pin Configuration
123456
A LB OE A0 A1 A2 CE2
B I/O8 UB A3 A4 CE1 I/O0
C I/O9 I/O10 A5 A6 I/O1 I/O2
D VSS I/O11 A17 A7 I/O3 VCC
E VCC I/O12 NC A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 NC A12 A13 WE I/O7
H A18 A8
A9 A10 A11 NC
48 Pin BGA (top)
8 x 10 mm
Pin Descriptions
Pin Name
A0-A18
WE
CE1, CE2
OE
LB
UB
I/O0-I/O15
VCC
VSS
NC
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Not Connected
(DOC# 14-02-019 REV F ECN# 01-1280)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.







N08L1618C2A pdf, 数据表
NanoAmp Solutions, Inc.
Timing Waveform of Write Cycle (WE control)
tWC
Address
tAW
N08L1618C2A
Advance Information
www.DataSheet4U.com
tWR
CE1
tCW
CE2
LB, UB
WE
Data In
Data Out
tLBW, tUBW
tAS
High-Z
tWHZ
tWP
tDW tDH
Data Valid
tOW
High-Z
Timing Waveform of Write Cycle (CE1 Control)
tWC
Address
CE1
(for CE2 Control, use
inverted signal)
LB, UB
tAW
tCW
tAS
tLBW, tUBW
tWP
tWR
WE
tDW tDH
Data In
Data Out
Data Valid
tLZ tWHZ High-Z
(DOC#14-02-019 REV F ECN# 01-1280)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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