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PDF ( 数据手册 , 数据表 ) LE25FU106B

零件编号 LE25FU106B
描述 CMOS IC 1M-bit (128K X 8) Serial Flash Memory
制造商 Sanyo Semicon Device
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LE25FU106B 数据手册, 描述, 功能
Ordering number : EN*A1140
LE25FU106B
CMOS IC
1M-bit (128K×8) Serial Flash Memory
Overview
The LE25FU106B is a serial interface-compatible flash memory device with a 128K × 8-bit configuration. It uses a
single 2.5V power supply for both reading and writing (program and erase functions) and does not require a special
power supply. As such, it can support on-board programming. It has three erase functions, each of which corresponds to
the size of the memory area in which the data is to be erased at one time: the small sector (4K bytes) erase function, the
sector (32K bytes) erase function, and the chip erase function (for erasing all the data together). The memory space can
be efficiently utilized by selecting one of these functions depending on the application. A page program method is
supported for data writing. The page program method of the LE25FU106B can program any amount of data from 1 to
256 bytes. The program time of 2.0ms (typ.) when programming 256 bytes (1 page) at one time makes for fast data
writing. While making the most of the features inherent to a serial flash memory device, the LE25FU106B is housed in
an 8-pin ultra-miniature package. Serial flash memory devices tend to be at a disadvantage in terms of their read speed,
but the LE25FU106B has maximally eliminated this speed-related disadvantage by supporting clocks with frequencies up
to 30MHz under SPI bus specifications. All these features make this device ideally suited to storing program codes in
applications such as portable information devices and small disk systems, which are required to have increasingly more
compact dimensions.
Features
Read/write operations enabled by single 2.5V power supply: 2.30 to 3.60V supply voltage range
Operating frequency : 30MHz
50MHz (at the planning stage)
Temperature range : 0 to 70°C
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–40 to +85°C (at the planning stage)
Continued on next page.
* This product is licensed from Silicon Storage Technology, Inc. (USA), and manufactured and sold by
SANYO Semiconductor Co., Ltd.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
41608 SY IM No.A1140-1/21







LE25FU106B pdf, 数据表
LE25FU106B
2-2. Status register write
The information in status registers BP0, BP1, and SRWP can be rewritten using the status register write command.
RDY, WEN, bit 4, bit 5, and bit 6 are read-only bits and cannot be rewritten. The information in bits BP0, BP1, and
SRWP is stored in the non-volatile memory, and when it is written in these bits, the contents are retained even at power-
down. "Figure 7 Status Register Write" shows the timing waveforms of status register write, and Figure 20 shows a
status register write flowchart. Consisting of the first and second bus cycles, the status register write command initiates
the internal write operation at the rising CS edge after the data has been input following (01h). Erase and program are
performed automatically inside the device by status register write so that erasing or other processing is unnecessary
before executing the command. By the operation of this command, the information in bits BP0, BP1, and SRWP can be
rewritten. Since bits RDY (bit 0), WEN (bit 1), 4, 5, and 6 of the status register cannot be written, no problem will arise
if an attempt is made to set them to any value when rewriting the status register. Status register write ends can be
detected by RDY of status register read. Information in the status registers can be rewritten 1,000 times (min.). To
initiate status register write, the logic level of the WP pin must be set high and status register WEN must be set to "1".
Figure 7 Status Register Write
CS
tWPS
Self-timed
Write Cycle
tSRW
tWPH
WP
SCK
SI
Mode3
Mode0
0 1 2 3 4 5 6 7 8 15
8CLK
01h
DATA
SO High Impedance
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2-3. Contents of each status register
RDY (bit 0)
The RDY register is for detecting the write (program, erase and status register write) end. When it is "1", the device is
in a busy state, and when it is "0", it means that write is completed.
No.A1140-8/21







LE25FU106B equivalent, schematic
Specifications
Absolute Maximum Ratings
Parameter
Maximum supply voltage
DC voltage (all pins)
Storage temperature
Symbol
Tstg
LE25FU106B
Conditions
With respect to VSS
With respect to VSS
Ratings
-0.5 to +4.6
-0.5 to VDD+0.5
-55 to +150
unit
V
V
°C
Operating Conditions
Parameter
Operating supply voltage
Operating ambient temperature
Symbol
Conditions
Ratings
2.30 to 3.60
0 to 70
-40 to +85 (at the planning stage)
unit
V
°C
Allowable DC Operating Conditions
Parameter
Read mode operating current
Symbol
ICCR
Write mode operating current
(erase+page program)
CMOS standby current
Power-down standby current
Input leakage current
Output leakage current
Input low voltage
Input high voltage
Output low voltage
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Output high voltage
ICCW
ISB
IDSB
ILI
ILO
VIL
VIH
VOL
VOH
Conditions
CS=0.1VDD, HOLD=WP=0.9VDD
SI=0.1VDD/0.9VDD, SO=open
operating frequency=30MHz,
VDD=VDD max
VDD=VDD max, tSSE=40ms,
tSE=60ms, tCHE=140ms,
tPP=2.5ms
CS=VDD, HOLD=WP=VDD,
SI=VSS/VDD, SO=open,
VDD=VDD max
CS=VDD, HOLD=WP=VDD,
SI=VSS/VDD, SO=open,
VDD=VDD max
VIN=VSS to VDD, VDD=VDD max
VIN=VSS to VDD, VDD=VDD max
VDD=VDD max
VDD=VDD min
IOL=100μA, VDD=VDD min
IOL=1.6mA, VDD=VDD min
IOH=-100μA, VDD=VDD min
Ratings
min typ max
unit
6 mA
-0.3
0.7VDD
VCC-0.2
15 mA
50 μA
10 μA
2
2
0.3VDD
VDD+0.3
0.2
0.4
μA
μA
V
V
V
V
Power-on Timing
Parameter
Time from power-on to read operation
Time from power-on to write operation
Power-down time
Power-down voltage
Symbol
tPU_READ
tPU_WRITE
tPD
vBOT
Ratings
min
100
10
10
max
0.2
unit
μs
ms
ms
V
Pin Capacitance at Ta=25°C, f=1MHz
Parameter
Symbol
Conditions
Ratings
max
unit
Output pin capacitance
CDQ
VDQ=0V
12 pF
Input pin Capacitance CIN VIN=0V
6 pF
Note: These parameter values do not represent the results of measurements undertaken for all devices but rather values
for some of the sampled devices.
No.A1140-16/21










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