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PDF ( 数据手册 , 数据表 ) FSBB20CH60CT

零件编号 FSBB20CH60CT
描述 Smart Power Module
制造商 Fairchild Semiconductor
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FSBB20CH60CT 数据手册, 描述, 功能
FSBB20CH60CT
Smart Power Module
May 2009
Motion-SPMTM
Features
• UL Certified No.E209204(SPM27-CC package)
• Very low thermal resistance due to using DBC
• Easy PCB layout due to built in bootstrap diode
• 600V-20A 3-phase IGBT inverter bridge including control ICs
for gate driving and protection
• Divided negative dc-link terminals for inverter current sensing
applications
• Single-grounded power supply due to built-in HVIC
• Isolation rating of 2500Vrms/min.
Applications
• AC 100V ~ 253V three-phase inverter drive for small power
ac motor drives
• Home appliances applications like air conditioner and wash-
ing machine
General Description
It is an advanced motion-smart power module (Motion-SPMTM)
that Fairchild has newly developed and designed to provide
very compact and high performance ac motor drives mainly tar-
geting low-power inverter-driven application like air conditioner
and washing machine. It combines optimized circuit protection
and drive matched to low-loss IGBTs. System reliability is fur-
ther enhanced by the integrated under-voltage lock-out and
short-circuit protection. The high speed built-in HVIC provides
opto-coupler-less single-supply IGBT gate driving capability that
further reduce the overall size of the inverter system design.
Each phase current of inverter can be monitored separately due
to the divided negative dc terminals.
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Top View
44mm
26.8mm
Bottom View
Figure 1.
©2009 Fairchild Semiconductor Corporation
FSBB20CH60CT Rev. C
1
www.fairchildsemi.com







FSBB20CH60CT pdf, 数据表
Bootstrap Diode Part
Symbol
Parameter
VF Forward Voltage
trr Reverse Recovery Time
Conditions
IF = 0.1A, TC = 25°C
IF = 0.1A, TC = 25°C
Min.
-
-
Typ.
2.5
80
Max.
-
-
Units
V
ns
Built in Bootstrap Diode VF-IF Characteristic
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0 TC=25
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
VF [V]
Note:
6. Built in bootstrap diode includes around 15resistance characteristic.
Figure 6. Built in Bootstrap Diode Characteristics
Recommended Operating Conditions
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Parameter
Conditions
VPN
VCC
VBS
dVCC/dt,
dVBS/dt
tdead
fPWM
VSEN
Supply Voltage
Control Supply Voltage
High-side Bias Voltage
Control supply variation
Applied between P - NU, NV, NW
Applied between VCC(H), VCC(L)- COM
Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
Blanking Time for Preventing For Each Input Signal
Arm-short
PWM Input Signal
Voltage for Current Sensing
-40°C TC 125°C, -40°C TJ 150°C
Applied between NU, NV, NW - COM
(Including surge voltage)
Min.
-
13.5
13.0
Value
Typ.
300
15
15
Max.
400
16.5
18.5
Units
V
V
V
-1 - 1 V/μs
2.0 -
- μs
- - 20 kHz
-4 4 V
FSBB20CH60CT Rev. C
8
www.fairchildsemi.com







FSBB20CH60CT equivalent, schematic
Detailed Package Outline Drawings (Continued)
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FSBB20CH60CT Rev. C
16
www.fairchildsemi.com










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