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零件编号 | FDD6760A | ||
描述 | N-Channel MOSFET | ||
制造商 | Fairchild Semiconductor | ||
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1 Page
FDD6760A
N-Channel PowerTrench® MOSFET
January 2009
25 V, 3.2 mΩ
Features
General Description
Max rDS(on) = 3.2 mΩ at VGS = 10 V, ID = 27 A
Max rDS(on) = 6.0 mΩ at VGS = 4.5 V, ID = 21 A
100% UIL test
RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low rDS(on) and fast
switching speed.
Applications
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
G
S
D
DTO-P-2A5K2
(TO-252)
D
G
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
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Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous (Package limited) TC = 25 °C
ID
-Continuous (Silicon limited)
-Continuous
TC = 25 °C
TA = 25 °C
-Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±20
50
131
27
200
72
65
3.7
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
2.3
40
°C/W
Device Marking
FDD6760A
Device
FDD6760A
Package
D-PAK (TO-252)
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2009 Fairchild Semiconductor Corporation
FDD6760A Rev.C
1
www.fairchildsemi.com
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页数 | 6 页 | ||
下载 | [ FDD6760A.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
FDD6760A | N-Channel MOSFET | Fairchild Semiconductor |
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