DataSheet8.cn


PDF ( 数据手册 , 数据表 ) DB-55008L-318

零件编号 DB-55008L-318
描述 RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
制造商 ST Microelectronics
LOGO ST Microelectronics LOGO 


1 Page

No Preview Available !

DB-55008L-318 数据手册, 描述, 功能
www.DataSheet4U.com
DB-55008L-318
RF power amplifier using 1 x PD55008L-E
N-channel enhancement-mode lateral MOSFETs
Preliminary Data
Features
Excellent thermal stability
Frequency: 225 - 318 MHz
Supply voltage: 13.6 V
Output power: 8 W
Power gain: 13.5 ± 0.7 dB
Efficiency: 51 % - 79 %
BeO free amplifier
Description
The DB-55008L-318 is a common source
N-channel enhancement-mode lateral field effect
RF power amplifier designed for VHF SEISMIC
applications.
Mechanical specification:
L = 60 mm, W = 30 mm
Table 1.
Device summary
Order codes
DB-55008L-318
February 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/14
www.st.com
14







DB-55008L-318 pdf, 数据表
www.DataSTheesett4cUi.crcomuit
Table 6. Components part list for DB-55008L-318 (continued)
Component ID Description
Value Case size Manufacturer
TL1 W=2.87 mm L=7.4 mm
TL2 W=2,87 mm L=3,5 mm
TL3 W=4.98 mm L=4,8 mm
TL4 Transmission line W=4.98 mm L=4.0 mm
TL5 W=2,87 mm L=1,0 mm
TL6 W=2.87 mm L=5,4 mm
TL7 W=2.87 mm L=6.7 mm
PD55008L
Board
LDMOS
STMicroelectronics
FR-4 THk = 0.060" 2 OZ Cu both sides
DB-55008L-318
Part code
PD55008L-E
8/14














页数 14 页
下载[ DB-55008L-318.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
DB-55008L-318RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETsST Microelectronics
ST Microelectronics

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap