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零件编号 | DB-55008L-318 | ||
描述 | RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs | ||
制造商 | ST Microelectronics | ||
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DB-55008L-318
RF power amplifier using 1 x PD55008L-E
N-channel enhancement-mode lateral MOSFETs
Preliminary Data
Features
■ Excellent thermal stability
■ Frequency: 225 - 318 MHz
■ Supply voltage: 13.6 V
■ Output power: 8 W
■ Power gain: 13.5 ± 0.7 dB
■ Efficiency: 51 % - 79 %
■ BeO free amplifier
Description
The DB-55008L-318 is a common source
N-channel enhancement-mode lateral field effect
RF power amplifier designed for VHF SEISMIC
applications.
Mechanical specification:
L = 60 mm, W = 30 mm
Table 1.
Device summary
Order codes
DB-55008L-318
February 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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Table 6. Components part list for DB-55008L-318 (continued)
Component ID Description
Value Case size Manufacturer
TL1 W=2.87 mm L=7.4 mm
TL2 W=2,87 mm L=3,5 mm
TL3 W=4.98 mm L=4,8 mm
TL4 Transmission line W=4.98 mm L=4.0 mm
TL5 W=2,87 mm L=1,0 mm
TL6 W=2.87 mm L=5,4 mm
TL7 W=2.87 mm L=6.7 mm
PD55008L
Board
LDMOS
STMicroelectronics
FR-4 THk = 0.060" 2 OZ Cu both sides
DB-55008L-318
Part code
PD55008L-E
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页数 | 14 页 | ||
下载 | [ DB-55008L-318.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
DB-55008L-318 | RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs | ST Microelectronics |
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