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零件编号 | NJG1125PB5 | ||
描述 | Triple LNA | ||
制造商 | JRC | ||
LOGO | |||
1 Page
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NJG1125PB5
W-CDMA Triple LNA GaAs MMIC
QGENERAL DESCRIPTION
NJG1125PB5 is a Triple band LNA IC designed for W-CDMA
/UMTS cellular phone of 2.1GHz, 1.7GHz and 800MHz band.
This IC has a LNA pass-through function to select high gain
mode or low gain mode.
An ultra small and ultra thin package of FFP16–B5 is adopted.
QPACKAGE OUTLINE
NJG1125PB5
QFEATURES
OLow voltage operation
OLow ctl voltage operation
OLow current consumption
OPackage
+2.85V typ.
+1.85V typ.
2.4mA typ. @High Gain Mode
0uA typ. @Low Gain Mode
FFP16-B5 (Package size: 2.0 x 2.0 x 0.65mm typ.)
[High gain mode]
OHigh gain
OLow noise figure
OHigh Input IP3
[Low gain mode]
OGain
OHigh Input IP3
17.0dB typ.
16.5dB typ.
17.5dB typ.
1.75dB typ.
1.50dB typ.
1.65dB typ.
0dBm typ.
-1dBm typ.
+1dBm typ.
@fRF=2140MHz
@fRF=885MHz
@fRF=1860MHz
@fRF=2140MHz
@fRF=885MHz
@fRF=1860MHz
@ fRF=2140.0+2140.1MHz, Pin=-30dBm
@fRF=885.0+885.1MHz, Pin=-30dBm
@fRF=1860.0+1860.1MHz, Pin=-30dBm
-8.0dB typ.
-6.5dB typ.
-9.0dB typ.
+14dBm typ.
+12dBm typ.
+14dBm typ.
@fRF=2140MHz
@fRF=885MHz
@fRF=1860MHz
@fRF=2140.0+2140.1MHz, Pin=-16dBm
@fRF=885.0+885.1MHz, Pin=-20dBm
@fRF=1860.0+1860.1MHz, Pin=-16dBm
QPIN CONFIGURATION
(Top View)
RFIN1 12
GND 11
VCTL1 10
VCTL2 9
GND
13
RFIN2
14
GND
15
Logic
Circuit
RFIN3
16
Bias
Circuit
800MHz Band
RFOUT1
8
Bias
Circuit
2.1GHz Band
GND
7
RFOUT2
6
1.7GHz Band
Bias
Circuit
GND
5
Pin Connection
1. GND
2. VINV
3. VCTL3 (Gain Sel.)
4. RFOUT3 (1.7GHz)
5. GND
6. RFOUT2 (2.1GHz)
7. GND
8. RFOUT1 (800MHz)
9. VCTL2 (Band Sel.)
10. VCTL1 (Band Sel.)
11. GND
12. RFIN1 (800MHz)
13. GND
14. RFIN2 (2.1GHz)
15. GND
16. RFIN3 (1.7GHz)
1 Pin INDEX
1 GND
2 VINV
3 VCTL3
4 RFOUT3
Note: Specifications and description listed in this catalog are subject to change without prior notice.
Ver.2006-07-21
-1-
NJG1125PB5
www.DataSheet4U.com
Q ELECTRICAL CHARACTERISTICS (2.1GHz Band High Gain Mode)
2.1GHz@High Gain
Pout vs. Pin
10
5
0
Pout
-5
-10
-15
-20
P-1dB(IN)=-11.8dBm
-25
-40 -30 -20 -10 0 10
Pin (dBm)
Condition
Ta=+25°C,
f=2140MHz,
VDD=VINV=2.7V,
VCTL1=0V, VCTL2=0V, VCTL3=1.85V
2.1GHz@High Gain
Gain, IDD vs. Pin
20
Gain
15
8
6
10 4
IDD
52
0
-40
P-1dB(IN)=-11.8dBm
-30 -20 -10
0
0
10
RF Power (dBm)
Condition
Ta=+25°C,
f=2140MHz,
VDD= VINV =2.7V,
VCTL1=0V, VCTL2=0V, VCTL3=1.85V
2.1GHz@High Gain
NF vs. frequency
4
3.5
3
2.5
NF
2
1.5
1
0.5
0
2 2.05 2.1 2.15 2.2 2.25 2.3
frequency (GHz)
Condition
Ta=+25°C,
f=2~2.3GHz,
VDD=VINV=2.7V,
VCTL1=0V, VCTL2=0V, VCTL3=1.85V
2.1GHz@High Gain
Pout, IM3 vs. Pin
20
0
Pout
-20
-40
-60
-80
-100
-40
IM3
IIP3=+1.2dBm
-30 -20 -10
Pin (dBm)
0
10
Condition
Ta=+25°C,
f1=2140MHz, f2=f1+100kHz,
VDD= VINV =2.7V,
VCTL1=0V, VCTL2=0V, VCTL3=1.85V
-8-
NJG1125PB5
www.DataSheet4U.com
Q ELECTRICAL CHARACTERISTICS (2.1GHz Band Low Gain Mode)
2.1GHz@Low Gain
Pout vs. Pin
10
0
-10
Pout
-20
-30
-40
-50
P-1dB(IN)=+11.0dBm
-60
-40 -30 -20 -10
0
Pin (dBm)
10
Condition
Ta=+25°C,
f=2140MHz,
VDD= VINV =2.7V,
VCTL1=0V, VCTL2=0V, VCTL3=0V
20
2.1GHz@Low Gain
Gain, IDD vs. Pin
-6
-8 Gain
8
7
-10 6
-12 5
-14 4
-16 3
-18 IDD 2
-20
-22
-40
P-1dB(IN)=+11.0dBm
-30 -20 -10
0
RF Power (dBm)
10
1
0
20
Condition
Ta=+25°C,
f=2140MHz,
VDD= VINV =2.7V,
VCTL1=0V, VCTL2=0V, VCTL3=0V
2.1GHz@Low Gain
NF vs. frequency
12
11
10
NF
9
8
7
6
5
4
2 2.05 2.1 2.15 2.2 2.25
frequency (GHz)
Condition
Ta=+25°C,
f=2~2.3GHz,
VDD= VINV =2.7V,
VCTL1=0V, VCTL2=0V, VCTL3=0V
2.3
2.1GHz@Low Gain
Pout, IM3 vs. Pin
20
0
-20
Pout
-40
-60
-80
-100
-40
IM3
IIP3=+16.5dBm
-30 -20 -10
0
Pin (dBm)
10
Ta=+25°C,
f1=2140MHz, f2=f1+100kHz,
VDD= VINV =2.7V,
VCTL1=0V, VCTL2=0V, VCTL3=0V
20
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页数 | 30 页 | ||
下载 | [ NJG1125PB5.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
NJG1125PB5 | Triple LNA | JRC |
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