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零件编号 | MW7IC2750GNR1 | ||
描述 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | ||
制造商 | Freescale Semiconductor | ||
LOGO | |||
1 Page
Freescale Semiconductor
Technical Data
Document Number: MW7IC2750N
Rev. 0, 5/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
www.datasAhBeeat4nud.cComlass C amplifier applications.
• T1P0yopuMtic=Hal8zWCWihMaatAtnsXnAePlvegBr.a,fonfrd=mw2aid7nt0che0,:IMnVpHDuDzt,=S8i02g28n.a1Vl6oPdltA,sR,64ID=QQ91A.5=Md13B6/40@, m4 0Ab.,u0Ir1Ds%tQs2,P=ro5b5a0bmilitAy,
on CCDF.
Power Gain — 26 dB
Power Added Efficiency — 17%
Device Output Signal PAR — 8.6 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — - 49 dBc in 1 MHz Channel Bandwidth
Driver Applications
•
CTPyohpuatinc=anl4eWlWBiMaatnAtsdXwAPivdegthr.,f,ofIrn=mp2au7nt 0cSe0ig:MnVaHDlDzP,=A8R0228=.1V96o.d5lt,sd,6B4ID@QQ1A0=M.01316/%40,
m4 Abu, rIDstQs2,
= 550 mA,
10 MHz
Probability on
CCDF.
Power Gain — 26 dB
Power Added Efficiency — 11%
Device Output Signal PAR — 9.2 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — - 57 dBc in 1 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 50 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 1 mW to 80 W CW
Pout
• Pout @ 1 dB Compression Point w 50 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C Operation
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MW7IC2750NR1
MW7IC2750GNR1
MW7IC2750NBR1
2700 MHz, 8 W AVG., 28 V
WiMAX
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1618 - 02
TO - 270 WB - 14
PLASTIC
MW7IC2750NR1
CASE 1621 - 02
TO - 270 WB - 14 GULL
PLASTIC
MW7IC2750GNR1
CASE 1617 - 02
TO - 272 WB - 14
PLASTIC
MW7IC2750NBR1
VDS1
RFin
VGS1
VGS2
Quiescent Current
Temperature Compensation (1)
RFout/VDS2
VDS1
VGS2
VGS1
NC
NC
RFin
RFin
NC
NC
VGS1
VGS2
VDS1
1
2
3
4
14
5
6
7
8
9 13
10
11
12
(Top View)
RFout /VDS2
RFout /VDS2
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current
Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1
1
www.datasheet4u.com
27.5
27
26.5
26
25.5
25
24.5
TYPICAL CHARACTERISTICS
0
VDD = 28 Vdc, Pout = 53 W (PEP), IDQ1 = 160 mA
−10 IDQ2 = 550 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2600 MHz
−20
IM3−U
−30
IM3−L
−40 IM5−L
IM5−U
−50
IM7−U
IM7−L
−60
1
10 100
TWO−TONE SPACING (MHz)
Figure 9. Intermodulation Distortion Products
versus Tone Spacing
1 40
0
Gps
−1
ACPR
ηD
35
30
−2 −1 dB = 8.41 W
−2 dB = 13.08 W
−3 dB = 18.16 W
25
−3 20
VDD = 28 Vdc, IDQ1 = 160 mA
PARC
−4 I6D4QQ2 A=M5530/4m, A4,Bfu=rs2ts6,0100MMHHzz, ,8C02h.a1n6ndel Bandwidth
15
−5
Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
10
5 10 15 20 25 30
Pout, OUTPUT POWER (WATTS)
Figure 10. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
45
VDD = 28 Vdc, IDQ1 = 160 mA, IDQ2 = 550 mA
40 f = 2600 MHz, 802.16d, 64 QAM 3/4, 4 Bursts
10 MHz Channel Bandwidth, Input Signal
35 PAR = 9.5 dB @ 0.01% Probability on CCDF
30
−40_C
25_C
85_C
25_C
−15
−20
−25
−30
25
20 TC = −40_C
25_C
15
10 ηD
85_C
Gps
5
ACPR
−35
−40
−40_C
−45
−50
−55
0 −60
1 10 70
Pout, OUTPUT POWER (WATTS) AVG. WiMAX
Figure 11. WiMAX, ACPR, Power Gain and
Drain Efficiency versus Output Power
−30
−35
−40
−45
−50
−55
−60
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1
8
RF Device Data
Freescale Semiconductor
www.datasheet4u.com
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1
16
RF Device Data
Freescale Semiconductor
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页数 | 25 页 | ||
下载 | [ MW7IC2750GNR1.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
MW7IC2750GNR1 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | Freescale Semiconductor |
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