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PDF ( 数据手册 , 数据表 ) MW7IC2725NR1

零件编号 MW7IC2725NR1
描述 RF LDMOS Wideband Integrated Power Amplifiers
制造商 Freescale Semiconductor
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MW7IC2725NR1 数据手册, 描述, 功能
Freescale Semiconductor
Technical Data
Document Number: MW7IC2725N
Rev. 2, 10/2008
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC2725N wideband integrated circuit is designed with on - chip
matching that makes it usable from 2300 - 2700 MHz. This multi - stage
www.datasshtreuect4tuu.rceomis rated for 26 to 32 Volt operation and covers all typical cellular
base station modulations.
TPyoputic=al4WWiMatAtsXAPvegr.,fofr=m2a7n0ce0:MVHDDz,=O2F8DVMol8ts0,2I.D1Q61d,=6747QmAAM, I3D/4Q,2 = 275 mA,
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 28.5 dB
Power Added Efficiency — 17%
Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — - 50 dBc in 1 MHz Channel Bandwidth
Driver Applications
Typical WiMAX Performance:
Pout = 26 dBm Avg., f = 2700
MVHDDz,=O2F8DVMol8ts0,2I.D1Q61d,=6747QmAAM,
I3D/Q4,2
=
275
mA,
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 27.8 dB
Power Added Efficiency — 3.2%
Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — - 56 dBc in 1 MHz Channel Bandwidth
Capable
CW
of
Handling
10:1
VSWR,
@
32
Vdc,
2600
MHz,
Pout
=
25
Watts
Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 5 W CW
Pout
Typical Pout @ 1 dB Compression Point ] 25 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S - Parameters
On - Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
VDS1
MW7IC2725NR1
MW7IC2725GNR1
MW7IC2725NBR1
2500 - 2700 MHz, 4 W AVG., 28 V
WiMAX
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1886 - 01
TO - 270 WB - 16
PLASTIC
MW7IC2725NR1
CASE 1887 - 01
TO - 270 WB - 16 GULL
PLASTIC
MW7IC2725GNR1
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW7IC2725NBR1
GND 1
VDS1
NC
2
3
NC 4
NC 5
RFin 6
16 GND
15 NC
14 RFout/VDS2
RFin
VGS1 Quiescent Current
VGS2 Temperature Compensation (1)
VDS1
Figure 1. Functional Block Diagram
RFout/VDS2
NC
VGS1
VGS2
VDS1
GND
7
8
9
10
11
13 NC
12 GND
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current
Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977
or AN1987.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
1







MW7IC2725NR1 pdf, 数据表
www.datasheet4u.com
29
28.5
28
27.5
27
26.5
26
TYPICAL CHARACTERISTICS
0
VDD = 28 Vdc, Pout = 27 W (PEP), IDQ1 = 77 mA
−10 IDQ2 = 275 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2600 MHz
−20
IM3−U
−30
IM3−L
IM5−L
−40
IM5−U
−50 IM7−L
IM7−U
−60
1
10 100
TWO−TONE SPACING (MHz)
Figure 9. Intermodulation Distortion Products
versus Tone Spacing
1
VDD = 28
802.16d,
6V4dcQ,AIDMQ13/=4,747
mA, IDQ2 = 275
Bursts, 10 MHz
mA f = 2600
Channel
MHz,
OFDM
35
0 Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
30
Probability on CCDF
−1
−2 −1 dB = 4.01 W
ηD
ACPR 25
Gps 20
−3 15
−4 PARC 10
−2 dB = 6.21 W −3 dB = 8.59 W
−5
13
5
6 9 12 15
Pout, OUTPUT POWER (WATTS)
Figure 10. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
45
VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA
40 f = 2600 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts
10 MHz Channel Bandwidth, Input Signal
35 PAR = 9.5 dB @ 0.01% Probability on CCDF
−40_C
25_C
85_C
85_C
−15
−20
−25
30 25_C −30
25 85_C
TC = −40_C 25_C
20
15
ηD
10
−40_C −35
−40
Gps
−45
−50
ACPR
5
−55
0 −60
1 10 50
Pout, OUTPUT POWER (WATTS) AVG. WiMAX
Figure 11. WiMAX, ACPR, Power Gain and
Drain Efficiency versus Output Power
−30
−35
−40
−45
−50
−55
−60
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
8
RF Device Data
Freescale Semiconductor







MW7IC2725NR1 equivalent, schematic
www.datasheet4u.com
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
16
RF Device Data
Freescale Semiconductor










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