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零件编号 | DB-55015-490 | ||
描述 | RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs | ||
制造商 | ST Microelectronics | ||
LOGO | |||
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www.datasheet4u.com
DB-55015-490
RF power amplifier using 1 x PD55015-E
N-channel enhancement-mode lateral MOSFETs
Preliminary Data
Features
■ Excellent thermal stability
■ Frequency: 420 - 490 MHz
■ Supply voltage: 13.2 V
■ Output power: 15 W
■ Power gain: 13.5 ± 0.7 dB
■ Efficiency: 51 % - 62 %
■ Load mismatch: 20:1
■ Beo free amplifier
Description
The DB-55015-490 is a common source
N-channel enhancement-mode lateral field effect
RF power amplifier designed for UHF mobile radio
applications.
Mechanical specification:
L = 60 mm, W = 30 mm
Table 1.
Device summary
Order codes
DB-55015-490
March 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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Test circuit
Table 6. Components part list (continued)
Component ID Description
Value
Case size
Manufacturer
TL2
www.datasheet4u.com
TL3
TL4
TL5
RF in, RF out
PD55015-E
Board
SMA-CONN
LDMOS
W = 4.9 mm,
L = 1 mm
W = 4.9 mm,
L = 2.48 mm
W = 4.9 mm,
L = 2.6 mm
W = 2.83 mm,
L = 9.6 mm
60 mils
JOHNSON
STMicroelectronics
FR-4 THk=0.060" 2OZ Cu both sides
DB-55015-490
Part code
142-0701-801
PD55015-E
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页数 | 14 页 | ||
下载 | [ DB-55015-490.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
DB-55015-490 | RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs | ST Microelectronics |
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