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PDF ( 数据手册 , 数据表 ) EM28C1604C3FL

零件编号 EM28C1604C3FL
描述 Flash and SRAM Combo Memory
制造商 NanoAmp Solutions
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EM28C1604C3FL 数据手册, 描述, 功能
EM28C1604C3FL
NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
EM28C1604C3FL
Advance Information
Low Voltage, Extended Temperature
FLASH AND SRAM COMBO MEMORY
www.datasheet4u.com
FEATURES
• Organization: 1,048K x 16 (Flash)
256K x 16 (SRAM)
• Basic configuration:
Flash
Thirty-nine erase blocks
– Eight 4K-word parameter blocks
– Thirty-one 32K-word main memory blocks
SRAM
4Mb SRAM for data storage
– 256K-words
• F_VCC, VCCQ, F_VPP, S_VCC voltages
2.7V (MIN)/3.3V (MAX) F_VCC read voltage
2.7V (MIN)/3.3V (MAX) S_VCC read voltage
2.2V (MIN)/3.3V (MAX) VCCQ
1.8V (TYP) F_VPP (in-system PROGRAM/ERASE)
12V ±5% (HV) F_VPP (production programming
compatibility)
1.0V (MIN) S_VCC (SRAM data retention)
• Asynchronous access time
Flash access time: 85ns @ 3.0V F_VCC
Flash access time: 90ns @ 2.7V F_VCC
SRAM access time: 85ns @ 2.7V S_VCC
• Low power consumption
• Enhanced WRITE/ERASE suspend option
• Read/Write SRAM during program/erase of Flash
• 128-bit chip OTP protection register for security
purposes
• Cross-compatible command set support
• PROGRAM/ERASE cycles
100,000 WRITE/ERASE cycles per block
BALL ASSIGNMENT
66-Ball FBGA (Top View)
1 2 3 4 5 6 7 8 9 10 11 12
A NC NC NC A11 A15 A14 A13 A12 F_Vss F_VccQ NC NC
B A16 A8
A10 A9 DQ15 S_W E# DQ14 DQ7
C F_WE # NC
DQ13
DQ6 DQ4 DQ5
D S_Vss F_RP#
DQ12 S_CE2 S_Vcc F_Vcc
E F_WP # F_Vpp
A19 DQ11
DQ10
DQ2 DQ3
F S_LB# S_UB# S_OE #
DQ9 DQ8 DQ0 DQ1
G A18 A17 A7 A6 A3 A2 A1 S_CE1#
H NC NC NC A5 A4 A0 F_CE# F_Vss F_OE# NC NC NC
OPTIONS
• Timing
90ns
MARKING
-9
• Boot Block
Top
Bottom
T
B
• Operating Temperature Range
Extended Temperature (-40oC to +85oC)
ET
• Package
66-ball FBGA (8 x 8 grid)
FL
Part Number Example:
EM28C1604C3FL-9 TET
Stock No. 23133-A 1/01
1
Advance - Subject to Change without Notice







EM28C1604C3FL pdf, 数据表
NanoAmp Solutions, Inc.
EM28C1604C3FL
Advance
ADDRESS RANGE
FFFFFH
F8000H
F7FFFH
F0000H
EFFFFH
E8000H
E7FFFH
www.datasheet4u.comE0000H
DFFFFH
D8000H
D7FFFH
D0000H
CFFFFH
C8000H
C7FFFH
C0000H
BFFFFH
B8000H
B7FFFH
B0000H
AFFFFH
A8000H
A7FFFH
A0000H
9FFFFH
98000H
97FFFH
90000H
8FFFFH
88000H
87FFFH
80000H
7FFFFH
78000H
77FFFH
70000H
6FFFFH
68000H
67FFFH
60000H
5FFFFH
58000H
57FFFH
50000H
4FFFFH
48000H
47FFFH
40000H
3FFFFH
38000H
37FFFH
30000H
2FFFFH
28000H
27FFFH
20000H
1FFFFH
18000H
17FFFH
10000H
0FFFFH
08000H
07FFFH
00000H
8 x 4K-Word Blocks
32K-Word Block
32K-Word Block
32K-Word Block
32K-Word Block
0
1
2
3
4
Parameter
Blocks
4K-Word Block
4K-Word Block
4K-Word Block
4K-Word Block
32K-Word Block
32K-Word Block
32K-Word Block
32K-Word Block
32K-Word Block
5
6
7
8
9
4K-Word Block
4K-Word Block
4K-Word Block
4K-Word Block
32K-Word Block 10
32K-Word Block 11
32K-Word Block 12
32K-Word Block 13
32K-Word Block 14
32K-Word Block 15
32K-Word Block 16
32K-Word Block 17
32K-Word Block 18
32K-Word Block 19
32K-Word Block 20
32K-Word Block 21
32K-Word Block 22
32K-Word Block 23
32K-Word Block 24
32K-Word Block 25
32K-Word Block 26
32K-Word Block 27
32K-Word Block 28
32K-Word Block 29
32K-Word Block 30
32K-Word Block 31
Figure 1
Top Boot Block Device
FFFFFH
FF000H
FEFFFH
FE000H
FDFFFH
FD000H
FCFFFH
FC000H
FBFFFH
FB000H
FAFFFH
FA000H
F9FFFH
F9000H
F8FFFH
F8000H
Stock No. 23133-A 1/01
8
Advance - Subject to Change without Notice







EM28C1604C3FL equivalent, schematic
NanoAmp Solutions, Inc.
EM28C1604C3FL
Advance
Table 7
Status Register Bit Definition
WSMS
ESS
ES
PS
www.datasheet4u.com
7654
VPPS
3
PSS
2
BLS
1
R
0
STATUS
BIT # STATUS REGISTER BIT
DESCRIPTION
SR7 WRITESTATEMACHINESTATUS(WSMS) Check write state machine bit first to determine word
1 = Ready
program or block erase completion, before checking
0 = Busy
program or erase status bits.
SR6 ERASESUSPENDSTATUS(ESS)
1 = BLOCK ERASE Suspended
0 = BLOCK ERASE in
Progress/Completed
When ERASE SUSPEND is issued, WSM halts execution and
sets both WSMS and ESS bits to “1.” ESS bit remains set to
“1” until an ERASE RESUME command is issued.
SR5 ERASESTATUS(ES)
1 = Error in Block Erasure
0 = Successful BLOCK ERASE
When this bit is set to “1,” WSM has applied the maximum
number of erase pulses to the block and is still unable to
verify successful block erasure.
SR4 PROGRAM STATUS (PS)
1 = Error in PROGRAM
0 = Successful PROGRAM
When this bit is set to “1,” WSM has attempted but failed to
program a word.
SR3 VPP STATUS (VPPS)
The VPP status bit does not provide continuous indication
1 = VPP Low Detect, Operation Abort of the VPP level. The WSM interrogates the VPP level only
0 = VPP = OK
after the program or erase command sequences have been
entered and informs the system if VPP has not been switched
on. The VPP level is also checked before the PROGRAM/ERASE
operation is verified by the WSM.
SR2 PROGRAM SUSPEND STATUS (PSS)
When PROGRAM SUSPEND is issued, WSM halts execution
1 = PROGRAM Suspended
and sets both WSM and PSS bits to “1.” PSS bit remains set to
0 = PROGRAM in Progress/Completed “1” until a PROGRAM RESUME command is issued.
SR1 BLOCK LOCK STATUS (BLS)
If a PROGRAM or ERASE operation is attempted to one of
1 = PROGRAM/ERASE Attempted on a the locked blocks, this is set by the WSM. The operation
Locked Block; Operation Aborted specified is aborted and the device is returned to read status
0 = No Operation to Locked Blocks
mode.
SR0 RESERVEDFORFUTURE
ENHANCEMENT
This bit is reserved for future.
Stock No. 23133-A 1/01
16
Advance - Subject to Change without Notice










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