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PDF ( 数据手册 , 数据表 ) NM29N16

零件编号 NM29N16
描述 16 MBit (2M x 8 Bit) CMOS NAND FLASH E2PROM
制造商 National Semiconductor
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NM29N16 数据手册, 描述, 功能
February 1996
NM29N16
16www.datasheet4u.com MBit (2M x 8 Bit) CMOS NAND FLASH E2PROM
General Description
The NM29N16 is a 16 Mbit (2 Mbyte) NAND FLASH The
device is organized as an array of 512 blocks each consist-
ing of 16 pages Each page contains 264 bytes All com-
mands and data are sent through eight I O pins To read
data a page is first transferred out of the array to an on-chip
buffer Sending successive read pulses (RE low) reads out
successive bytes of data The erase operation is implement-
ed in either a single block (4 kbytes) or on multiple blocks at
the same time Programming the device requires sending
address and data information to the on-board buffer and
then issuing the program command Typical program time
for 264 bytes is 400 ms All erase and program operations
are internally timed
The NM29N16 incorporates a number of features that make
it ideal for portable applications requiring high density stor-
age These features include single 5V operation high read
write endurance (250k cycle) and low current operation
(15 mA during reads) The device comes in a TSOP Type II
package which meets the requirements of PCMCIA cards
The NM29N16 is suited for numerous applications such as
Solid State Drives (SSD) Audio Recording and Image Stor-
age for digital cameras
Features
Y Single 5V g10% power supply
Y Write Erase endurance of 250 000 cycles target of
1 000 000 cycles
Y Fast Erase Program Times
Average Program Time of 400 ms 264 bytes
Typical Block Erase Time of 6 ms
Y Organized as 512 blocks each consisting of 16 pages
of 264 bytes
Read Program in pages of 264 bytes
Erase in Blocks of 4 kbytes
Y High Performance Read Access times
Initial 25 ms page transfer
Sequential 80 ns access
Y Low Operating Current (typical)
Typical Read current of 15 mA
Typical Program current of 40 mA
Typical Erase current of 20 mA
Standby current less than 100 mA (CMOS)
Y Command Register for Mode Control
Read
Reset
Auto Page Program
Suspend Resume
Auto Block Erase
Status Read
Y 400 mil TSOP Type II Package
Y JEDEC standard pinout
Block Diagram
C1996 National Semiconductor Corporation TL D 11915
RRD-B30M56 Printed in U S A
TL D 11915 – 1







NM29N16 pdf, 数据表
Device Operation (Continued)
READ MODE (2)
The Read mode (2) is the same timing as Read mode (1) but it is used to access information in the extra 8 byte redundancy area
of the page The starting pointer is therefore assigned between byte 256 and 263
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Address A0–A2 are used to set the starting pointer for the redundant memo-
ry cell while A3–A7 are ignored
Once the ‘‘50H’’ command is set the pointer moves to the redundant cell
locations and only those 8 cells can be addressed regardless of the A3–A7
address
(The ‘‘00H’’ command is necessary to move the pointer back to the
0–255 main memory cell locations )
TL D 11915 – 31
FIGURE 3 Read Mode (2) Operation
SEQUENTIAL READ (1) (2)
This mode allows sequential read without the additional address input
FIGURE 4 Sequential Read
TL D 11915 – 32
Sequential Read mode (1) outputs the address 0 to 263 while Sequential Read mode (2) outputs the redundant address location
only When the pointer reaches the last address the device continues to output last data with each RE clcck signal
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8







NM29N16 equivalent, schematic
Timing Diagrams (Continued)
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Status Read Cycle
Read Cycle (1)
TL D 11915 – 11
http www national com
16
TL D 11915 – 12










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