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PDF ( 数据手册 , 数据表 ) K30N60HS

零件编号 K30N60HS
描述 SKW30N60HS
制造商 Infineon
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K30N60HS 数据手册, 描述, 功能
SKW30N60HS
High Speed IGBT in NPT-technology
30% lower Eoff compared to previous generation
Short circuit withstand time – 10 µs
Designed for operation above 30 kHz
NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
High ruggedness, temperature stable behaviour
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
VCE
IC
Eoff Tj Marking
Package
SKW30N60HS
600V 30 480µJ 150°C K30N60HS PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 600V, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage static
transient (tp<1µs, D<0.05)
Short circuit withstand time2)
VGE = 15V, VCC 600V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Time limited operating junction temperature for t < 150h
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj ,
Tstg
Tj(tl)
-
600
41
30
112
112
41
28
112
±20
±30
10
250
-55...+150
175
260
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.2 Sep 08







K30N60HS pdf, 数据表
SKW30N60HS
5,0mJ
4,0mJ
*) Eon and Ets include losses
due to diode recovery
3,0mJ
2,0mJ
1,0mJ
Eon*
Eoff
0,0mJ
0A
10A 20A 30A 40A 50A 60A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, RG=11,
Dynamic test circuit in Figure E)
3,0 mJ
*) Eon and Ets include losses
due to diode recovery
2,5 mJ
2,0 mJ
1,5 mJ Ets*
1,0 mJ Eon*
0,5 mJ
Eoff
0,0 mJ
0Ω 5Ω 10Ω 15Ω 20Ω 25Ω 30Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, IC=30A,
Dynamic test circuit in Figure E)
*) Eon and Ets include losses
due to diode recovery
1,5mJ
1,0mJ
0,5mJ
Ets*
Eon*
Eoff
0,0mJ
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=400V,
VGE=0/15V, IC=30A, RG=11,
Dynamic test circuit in Figure E)
D=0.5
10-1K/W 0.2
0.1
0.05
10-2K/W 0.02
0.01
10-3K/W
R,(K/W)
0.3681
0.0938
0.038
τ, (s)
0.0555
1.26E-03
1.49E-04
R1 R2
single pulse
10-4K/W
1µs
10µs 100µs
C1=τ1/R1 C2=τ2/R2
1ms 10ms 100ms
tP, PULSE WIDTH
Figure 16. IGBT transient thermal resistance
(D = tp / T)
Power Semiconductors
8
Rev. 2.2 Sep 08














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