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PDF ( 数据手册 , 数据表 ) Q1NC45R-AP

零件编号 Q1NC45R-AP
描述 STQ1NC45R-AP
制造商 STMicroelectronics
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Q1NC45R-AP 数据手册, 描述, 功能
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STD2NC45-1
STQ1NC45R-AP
N-channel 450V - 4.1- 1.5A - IPAK - TO-92
SuperMESH™ Power MOSFET
General features
Type
STD2NC45-1
STQ1NC45R-AP
VDSS
450V
450V
RDS(on)
<4.5
<4.5
ID
1.5A
0.5A
Pw
30W
3.1W
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
New high voltage benchmark
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products.
Applications
Switching application
– Switch mode low power supplies (SMPS)
– Low power, low cost CFL (compact
fluorescent lamps)
– Low power battery chargers
IPAK
3
2
1
TO-92 (ammopak)
Internal schematic diagram
Order codes
Part number
STD2NC45-1
STQ1NC45R-AP
Marking
D2NC45
Q1NC45R
Package
IPAK
TO-92
Packaging
Tube
Ammopak
July 2006
Rev 3
1/15
www.st.com
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Q1NC45R-AP pdf, 数据表
www.datasheet4u.com
Electrical characteristics
Figure 13. Source-drain diode forward
characteristics
STD2NC45-1 - STQ1NC45R-AP
Figure 14. Normalized BVDSS vs temperature
Figure 15. Max Id current vs Temperature
Figure 16. Maximum avalanche energy vs
temperature
8/15














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