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零件编号 | P5506BVG | ||
描述 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | ||
制造商 | Niko | ||
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NIKO-SEM
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N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P5506BVG
SOP-8
Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60 55m
ID
5.5A
D
G
S
4 :GATE
5,6,7,8 :DRAIN
1,2,3 :SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 70 °C
TC = 25 °C
TC = 70 °C
VDS
VGS
ID
IDM
PD
Tj, Tstg
LIMITS
60
±20
5.5
4.5
20
2.5
1.3
-55 to 150
UNITS
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle ≤ 1%
TYPICAL
MAXIMUM
50
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
Drain-Source
Resistance1
On-State
Forward Transconductance1
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 55 °C
VDS = 5V, VGS = 10V
VGS = 4.5V, ID = 4.5A
VGS = 10V, ID = 5.5A
VDS = 10V, ID = 5.5A
LIMITS
UNIT
MIN TYP MAX
60
1.0 1.5 2.5
V
±100 nA
1
10 µA
20 A
55 75
m
42 55
14 S
1 SEP-30-2004
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页数 | 5 页 | ||
下载 | [ P5506BVG.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
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P5506BVG | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Niko |
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