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PDF ( 数据手册 , 数据表 ) P5504EVG

零件编号 P5504EVG
描述 P-Channel Logic Level Enhancement Mode Field Effect Transistor
制造商 Niko
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P5504EVG 数据手册, 描述, 功能
NIKO-SEM P-Channel Logic Level Enhancement
www.DataSheet4U.com
Mode Field Effect Transistor
P5504EVG
SOP-8
Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
55m
ID
-5.5A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Power Dissipation
TC = 25 °C
TC = 70 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VDS
VGS
ID
IDM
PD
Tj, Tstg
TL
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
TYPICAL
4 :GATE
5,6,7,8 :DRAIN
1,2,3 :SOURCE
LIMITS
-40
±20
-5.5
-4.5
-20
2.5
1.3
-55 to 150
275
UNITS
V
V
A
W
°C
MAXIMUM
50
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
-40
-1 -1.5 -2.5
V
VDS = 0V, VGS = ±20V
±250 nA
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V, TJ = 125 °C
1
µA
10
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VDS = -5V, VGS = -10V
VGS = -4.5V, ID = -4.5A
VGS = -10V, ID = -5.5A
VDS = -10V, ID = -5.5A
-20
65
38
11
A
94
m
55
S
SEP-30-2004
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