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PDF ( 数据手册 , 数据表 ) FGA15N120FTD

零件编号 FGA15N120FTD
描述 15A Field Stop Trench IGBT
制造商 Fairchild Semiconductor
LOGO Fairchild Semiconductor LOGO 


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FGA15N120FTD 数据手册, 描述, 功能
March 2013
FGA15N120FTD
1200 V, 15 A Field Stop Trench IGBT
Features
• Field Stop Trench Technology
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.58 V @ IC = 15 A
• High Input Impedance
• RoHS Complaint
Applications
• Induction Heating, Microwave Oven
General Description
Using advanced field stop trench technology, Fairchild®’s
1200V trench IGBTs offer superior conduction and switching
performances for soft switching applications. The device can
operate in parallel configuration with exceptional avalanche rug-
gedness. This device is designed for induction heating and
microwave oven.
C
GCE
TO-3PN
Absolute Maximum Ratings
Symbol
Description
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
Diode Continuous Forward Current
@ TC = 100oC
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2008 Fairchild Semiconductor Corporation
FGA15N120FTD Rev. C0
1
G
E
Ratings
1200
25
30
15
45
15
90
220
88
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
A
W
W
oC
oC
oC
Typ.
-
-
-
Max.
0.57
2.1
62.5
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com







FGA15N120FTD pdf, 数据表
Mechanical Dimensions
TO-3PN
©2008 Fairchild Semiconductor Corporation
FGA15N120FTD Rev. C0
8
Dimensions in Millimeters
www.fairchildsemi.com














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