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PDF ( 数据手册 , 数据表 ) SiHF9630

零件编号 SiHF9630
描述 Power MOSFET ( Transistor )
制造商 Vishay Siliconix
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SiHF9630 数据手册, 描述, 功能
Power MOSFET
IRF9630, SiHF9630
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Max.) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
- 200
VGS = - 10 V
29
5.4
15
Single
0.80
S
TO-220AB
G
S
D
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
TO-220AB
IRF9630PbF
SiHF9630-E3
IRF9630
SiHF9630
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at - 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 50 V, starting TJ = 25 °C, L = 17 mH, Rg = 25 Ω, IAS = - 6.5 A (see fig. 12).
c. ISD - 6.5 A, dI/dt ≤ 120 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
- 200
± 20
- 6.5
- 4.0
- 26
0.59
500
- 6.4
7.4
74
- 5.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91084
S11-0513-Rev. C, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







SiHF9630 pdf, 数据表
www.vishay.com
E
ØP
123
M*
b(1)
e
e(1)
b
C
TO-220-1
Package Information
Vishay Siliconix
A
F
MILLIMETERS
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.14
4.70
0.163
0.185
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.73
0.045
0.068
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
0.43
1.40
0.017
0.055
H(1)
6.10
6.48
0.240
0.255
J(1)
2.41
2.92
0.095
0.115
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.59
3.00
0.102
0.118
ECN: X15-0003-Rev. A, 19-Jan-15
DWG: 6031
Notes
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
• Outline conforms to JEDEC® outline TO-220AB with exception
of dimension F
J(1)
Revison: 19-Jan-15
1 Document Number: 66542
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000














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