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PDF ( 数据手册 , 数据表 ) D2137

零件编号 D2137
描述 NPN Transistor - 2SD2137
制造商 Panasonic Semiconductor
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D2137 数据手册, 描述, 功能
Power Transistors
2SD2137, 2SD2137A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1417 and 2SB1417A
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Low collector to emitter saturation voltage VCE(sat)
q Allowing supply with the radial taping
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
www.DataSheCeto4lUle.cctoormto 2SD2137
base voltage 2SD2137A
VCBO
60
80
V
Collector to 2SD2137
emitter voltage 2SD2137A
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
60
80
6
5
3
15
2
150
–55 to +150
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD2137
current
2SD2137A
Collector cutoff
2SD2137
current
2SD2137A
Emitter cutoff current
Collector to emitter 2SD2137
voltage
2SD2137A
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICES
ICEO
IEBO
VCEO
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = 60V, VBE = 0
VCE = 80V, VBE = 0
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VEB = 6V, IC = 0
IC = 30mA, IB = 0
VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
VCE = 4V, IC = 3A
IC = 3A, IB = 0.375A
VCE = 5V, IC = 0.2A, f = 10MHz
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
Unit: mm
10.0±0.2
5.0±0.1
1.0
90°
0.35±0.1
1.2±0.1
0.65±0.1
1.05±0.1
0.55±0.1
C1.0
2.25±0.2
0.55±0.1
C1.0 1 2 3
2.5±0.2
2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
min typ max Unit
100
µA
100
100
µA
100
100 µA
60
V
80
70 250
10
1.8 V
1.2 V
30 MHz
0.3 µs
2.5 µs
0.2 µs
*hFE1 Rank classification
Rank
Q
P
hFE1 70 to 150 120 to 250
Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification.
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