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PDF ( 数据手册 , 数据表 ) FZ200R65KF1

零件编号 FZ200R65KF1
描述 IGBT Modules
制造商 Eupec GmbH
LOGO Eupec GmbH LOGO 


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FZ200R65KF1 数据手册, 描述, 功能
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 200 R 65 KF1
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Tvj=125°C
Tvj=25°C
Tvj=-40°C
Kollektor-Dauergleichstrom
DC-collector current
TC = 80 °C
TC = 25 °C
www.DataSheet4U.comPeriodischer Kollektor Spitzenstrom
repetitive peak collector current
tP = 1 ms, TC = 80°C
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
Grenzlastintegral der Diode
I2t - value, Diode
VR = 0V, tp = 10ms, TVj = 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
Teilentladungs Aussetzspannung
partial discharge extinction voltage
RMS, f = 50 Hz, QPD typ. 10pC (acc. To IEC 1287)
VCES
IC,nom.
IC
ICRM
Ptot
VGES
IF
IFRM
I2t
VISOL
VISOL
6500
6300
5800
200
400
400
3,8
+/- 20V
200
400
26
10,2
5,1
V
A
A
A
kW
V
A
A
k A2s
kV
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
IC = 200A, VGE = 15V, Tvj = 25°C
IC = 200A, VGE = 15V, Tvj = 125°C
Gate-Schwellenspannung
gate threshold voltage
IC = 35mA, VCE = VGE, Tvj = 25°C
Gateladung
gate charge
VGE = -15V ... +15V
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 6300V, VGE = 0V, Tvj = 25°C
VCE = 6500V, VGE = 0V, Tvj = 125°C
VCE = 0V, VGE = 20V, Tvj = 25°C
VCE sat
min.
-
-
typ.
4,3
5,3
max.
4,9
5,9
VGE(th)
6,4
7,0
8,1
V
V
V
QG - 2,8 - µC
Cies - 28 - nF
ICES
-
0,2
20
-
mA
mA
IGES
-
- 400 nA
prepared by: Dr. Oliver Schilling
approved by: Dr. Schütze 2002-07-05
date of publication: 2002-07-05
revision/Status: Series 1
1 FZ 200 R65 KF1 (final 1).xls







FZ200R65KF1 pdf, 数据表
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 200 R 65 KF1
www.DataSheet4U.com
Transienter Wärmewiderstand
Transient thermal impedance
0,1
ZthJC = f (t)
0,01
0,001
0,001
0,01
0,1
Zth:Diode
Zth:IGBT
1 10
100
t [s]
i 1234
ri [K/kW]
: IGBT
14,85
8,25
1,98
7,92
τi [s]
: IGBT
0,030
0,10
0,30
1,0
ri [K/kW]
: Diode
28,35
15,75
3,78
15,12
τi [s]
: Diode
0,030
0,10
0,30
1,0
8 FZ 200 R65 KF1 (final 1).xls














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