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零件编号 | D882 | ||
描述 | NPN TRANSISTOR | ||
制造商 | Jiangsu Changjiang Electronics | ||
LOGO | |||
1 Page
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
D882 TRANSISTOR NPN
FEATURES
Power dissipation
PCM : 1.25
Collector current
www.DataSheet4U.com
ICM : 3
Collector-base voltage
W Tamb=25
A
V(BR)CBO : 40 V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
TO 126
1. EMITTER
2.COLLECTOR
3.BASE
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=100 A IE=0
40
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CEO
V(BR)EBO
IC= 10 mA , IB=0
IE= 100 A IC=0
30
6
V
V
Collector cut-off current
ICBO VCB=40 V , IE=0
1A
Collector cut-off current
Emitter cut-off current
ICEO VCE=30 V , IB=0
IEBO VEB=6V , IC=0
10 A
1A
DC current gain
hFE 1
hFE 2
VCE= 2V, IC= 1A
VCE=2V, IC= 100mA
60
32
400
Collector-emitter saturation voltage
VCE(sat)
IC=2A, IB= 0.2A
0.5 V
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC=2A, IB= 0.2A
VCE=5 V, IC=0.1mA
f = 10MHz
50
1.5 V
MHz
CLASSIFICATION OF hFE(1)
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400
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页数 | 2 页 | ||
下载 | [ D882.PDF 数据手册 ] |
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