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零件编号 | PH1819-33 | ||
描述 | WIRELESS POWER TRANSISTOR | ||
制造商 | Tyco Electronics | ||
LOGO | |||
1 Page
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Wireless Power Transistor, 33W
1805 - 1880 MHz
PHl819-33
Features
l NPN Silicon Microwave Power Transistor
l Common Emitter Class AI3 Operation
l Internal Input and Output Impedance Matching
l Diffksed Emitter Ballasting
l Gold Metallization System
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Absolute’ Maximum Ratings at 25°C
I Parameter
I Sym~l I Rating
Collector-EmitterVoltage
Collector-EmitterVoltage
Emitter-Base Voltage
CollectorCurrent
Power Dissipation
StorageTemperature
VCEO
VcE.s
Vem
25
65
3.0
I ‘c I
4.7
PO 91
Tc-Fe
-55 to +150
) JunctionTemperature
) T, 1 200
Thermal Resistance
6JC 3.0
1 Units 1
V
V
V
I*
w
I
“C
I “C I
“C/W
I- .744 (18.90)-1
v2.01
225 (5.72)*.015 (0.38)
;48/6.30) &&y&T
,
I
225(5.72)+.015 (0.38)
1 *\I
1f
CqO(6.35)
,181 (4.6O)zt.OlO(0.25)
t+
.087 (2.21)r.OlO(0.25)
2.20 I--
(5.59)
1
/
.co5 (0.13)+.001(0.03)
I
11 D6Ojl.52)
f
UNLESS OTHERWISE NOTED, TOLERANCES ARE
INCHES t.005’ (MILLIMETERS t0.13MM)
Electrical Characteristics at 25°C
Parameter
Symbol Min Max Units
Test Conditions
Power Gain
Collector Efficiency
Input Return Loss
r
Load Mismatch Tolerance
GP 7.0 - dB I’,,=25 V, I,,=200 mA, PO,,=33 W, F=1805,1880 MHz
% 40 - % V,,=25 V, l,Q=200 mA, P,,,=33 W, F=l805,1880 MHz
RL 10 - dB V,,=25 V, I,,=200 mA, P,,,=33 W, F=l805,1880 MHz
VSWR-T
-
2:l
- V,,=25 V, I,,=200 mA, PO,,=33 W, F=1805,1880 MHz
Broadband Test Fixture impedances
I- ~~1805
1850
1880
I 1.8 - j5.5
1.6 - j5.1
l.?-j4.8
I 4.0-j1.4
3.9 - jl.4
4.0 - j0.9
I
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页数 | 2 页 | ||
下载 | [ PH1819-33.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
PH1819-33 | WIRELESS POWER TRANSISTOR | Tyco Electronics |
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