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零件编号 | FDZ7296 | ||
描述 | 30V N-Channel PowerTrench BGA MOSFET | ||
制造商 | Fairchild Semiconductor | ||
LOGO | |||
1 Page
November 2004
FDZ7296
30V N-Channel PowerTrench® BGA MOSFET
General Description
Combining Fairchild’s advanced PowerTrench process
with state-of-the-art BGA packaging, the FDZ7296
www.DataSheet4U.com
minimizes
MOSFET
both PCB
embodies
space and RDS(ON).
a breakthrough in
This BGA
packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low RDS(ON).
Applications
• High-side Mosfet in DC-DC converters for Server
and Notebook applications
Features
11 A, 30 V.
RDS(ON) = 8.5 mΩ @ VGS = 10 V
RDS(ON) = 12 mΩ @ VGS = 4.5 V
• Occupies only 0.10 cm2 of PCB area:
1/3 the area of SO-8.
• Ultra-thin package: less than 0.80 mm height
when mounted to PCB.
• High performance trench technology for extremely
low RDS(ON)
• Optimized for low Qg and Qgd to enable fast
switching and reduce CdV/dt gate coupling
D DD
S SS
S SS
Pin 1
Pin 1
S SS
GSS
DD D
Top
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJB Thermal Resistance, Junction-to-Ball
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
7296
FDZ7296
7’’
D
G
S
Ratings
30
±20
11
20
2.1
–55 to +150
60
6.3
0.6
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2004 Fairchild Semiconductor Corporation
FDZ7296 Rev B (W)
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页数 | 6 页 | ||
下载 | [ FDZ7296.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
FDZ7296 | 30V N-Channel PowerTrench BGA MOSFET | Fairchild Semiconductor |
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