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零件编号 | SPI42N03S2L-13 | ||
描述 | OptiMOS Power-Transistor | ||
制造商 | Infineon Technologies | ||
LOGO | |||
1 Page
OptiMOS® Power-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
www.DataSheet4•UE.cxocmellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
P-TO262-3-1
• Avalanche rated
• dv /dt rated
SPI42N03S2L-13
SPP42N03S2L-13 SPB42N03S2L-13
Product Summary
V DS
R DS(on),max
ID
30 V
12.9 mΩ
42 A
P-TO263-3-2
P-TO220-3-1
Type
SPP42N03S2L-13
SPB42N03S2L-13
SPI42N03S2L-13
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67042-S4034
Q67042-S4035
Q67042-S4104
Marking
2N03L13
2N03L13
2N03L13
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current1)
I D T C=25 °C
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C
Avalanche energy, single pulse
Repetitive avalanche energy
E AS
E AR
I D=42 A, R GS=25 Ω
limited by T jmax 2)
Reverse diode dv /dt
dv /dt
I D=42 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
42
42
248
110
8
6
±20
83
-55 ... 175
55/175/56
Unit
A
mJ
mJ
kV/µs
V
W
°C
Rev. 2.0
page 1
2004-06-04
Package Outline
P-TO263-3-2: Outline
www.DataSheet4U.com
P-TO262-3-1: Outline
SPI42N03S2L-13
SPP42N03S2L-13 SPB42N03S2L-13
Footprint
Packaging
Dimensions in mm
Rev. 2.0
page 8
2004-06-04
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页数 | 10 页 | ||
下载 | [ SPI42N03S2L-13.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
SPI42N03S2L-13 | OptiMOS Power-Transistor | Infineon Technologies |
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