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PDF ( 数据手册 , 数据表 ) H6968S

零件编号 H6968S
描述 Dual N-Channel Enhancement-Mode MOSFET
制造商 Hi-Sincerity Mocroelectronics
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H6968S 数据手册, 描述, 功能
www.DataSheet4U.com
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200510
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 1/4
H6968S / H6968CS
Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A) 8-Lead Plastic SO-8
(Battery Switch, ESD Protected)
Package Code: S
Features
RDS(on)=32m@VGS=2.5V, ID=5.5A
RDS(on)=24m@VGS=4.5V, ID=6.5A
Advanced Trench Process Technology
High Density Cell Design for Ultra Low On-Resistance
Specially Designed for Li ion Battery Packs Use
Designed for Battery Switch Appliactions
ESD Protected
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current (Continuous)
IDM Drain Current (Pulsed) *1
Total Power Dissipation @TA=25oC
PD Total Power Dissipation @TA=75oC
Tj, Tstg
RθJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)*2
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board
Ratings
20
±12
6.5
30
2
1.3
-55 to +150
62.5
Pin Assignment & Internal Schematic Diagram
Part No.
H6968S
Pin Assignment
S2 1
G2 2
8 D2
7 D2
S1 3
G1 4
6 D1
5 D1
Top View
Internal Schematic Diagram
D1
G1 G2
S1
D
H6968CS
S2 1
G2 2
S1 3
G1 4
8D
7D
6D
5D
G1
G2
Top View
S1
D2
S2
D
S2
Units
V
V
A
A
W
W
°C
°C/W
H6968S, H6968CS
HSMC Product Specification












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