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零件编号 | JS28F160B3 | ||
描述 | (JS28Fxxx) Advanced Boot Block Flash Memory | ||
制造商 | Intel | ||
LOGO | |||
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Intel® Advanced Boot Block Flash
Memory (B3)
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Datasheet
Product Features
• Flexible SmartVoltage Technology
— 2.7 V – 3.6 V read/program/erase
— 12 V VPP fast production programming
• 1.65 V – .5 V or 2.7 V – 3.6 V I/O option
— Reduces overall system power
• High Performance
— 2.7 V – 3.6 V: 70 ns max access time
• Optimized Block Sizes
— Eight 8-KB blocks for data, top or
bottom locations
— Up to 127 x 64-KB blocks for code
• Block Locking
— VCC-level control through Write Protect
WP#
• Low Power Consumption
— 9 mA typical read current
• Absolute Hardware-Protection
— VPP = GND option
— VCC lockout voltage
• Extended Temperature Operation
— –40 °C to +85 °C
• Automated Program and Block Erase
— Status registers
• Intel® Flash Data Integrator Software
—Flash Memory Manager
—System Interrupt Manager
—Supports parameter storage, streaming
data (for example, voice)
• Extended Cycling Capability
—Minimum 100,000 block erase cycles
• Automatic Power Savings Feature
—Typical ICCS after bus inactivity
• Standard Surface Mount Packaging
—48-Ball CSP packages
—40-Lead and 48-Lead TSOP packages
• Density and Footprint Upgradeable for
common package
—8-, 16-, 32-, and 64-Mbit densities
• ETOX™ VIII (0.13 µm) Flash
Technology
—16-Mbit and 32-Mbit densities
• ETOX™ VII (0.18 µm) Flash Technology
—16-, 32-, and 64-Mbit densities
• ETOX ™ VI (0.25µm) Flash Technology
—8-, 16-, and 32-Mbit densities
• Bo not use the x8 option for new designs
The Intel® Advanced Boot Block Flash Memory (B3) device, manufactured on the Intel 0.13 µm
and 0.18 µm technologies, is a feature-rich solution at a low system cost. The B3 device in x16 is
available in 48-lead TSOP and 48-ball CSP packages. The x8 option of this product family is
available only in 40-lead TSOP and 48-ball µBGA* packages. For additional information about
this product family, see the Intel website: http://www.intel.com/design/flash.
Notice: This specification is subject to change without notice. Verify with your local Intel sales
office that you have the latest datasheet before finalizing a design.
Order Number: 290580, Revision: 020
18 Aug 2005
www.DataSheet4U.com
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
1.2 Conventions
Table 2.
2.0
Conventions
Convention
Description
Pin or signal
Group Membership Brackets
Set
Clear:
Block
Main Block
Parameter Block
Used interchangeably to refer to the external signal connections on the
package.
Note: For a chip scale package (CSP), the term ball is used in place of pin.
Square brackets designate group membership or define a group of signals
with similar function (for example, A[21:1], SR[4:1])
When referring to registers, the term set means the bit is a logical 1.
When referring to registers, the term clear means the bit is a logical 0.
A group of bits (or words) that erase simultaneously using one block erase
instruction.
A block that contains 32 Kwords.
A block that contains 4 Kwords.
Functional Overview
The B3 flash memory device features the following:
• Enhanced blocking for easy segmentation of code and data or additional design flexibility.
• Program Suspend to Read command.
• VCCQ input of 1.65 V to 2.5 V or 2.7 V to 3.6 V on all I/Os. See Figure 1 through Figure 4 for
pinout diagrams and VCCQ location.
• Maximum program and erase time specification for improved data storage.
Table 3.
B3 Device Feature Summary (Sheet 1 of 2)
Feature
28F008B3, 28F016B3
28F800B3, 28F160B3,
28F320B3(3), 28F640B3
VCC Read Voltage
VCCQ I/O Voltage
VPP Program/Erase Voltage
Bus Width
Speed
Memory Arrangement
2.7 V– 3.6 V
1.65 V–2.5 V or 2.7 V– 3.6 V
2.7 V– 3.6 V or 11.4 V– 12.6 V
8 bit 16 bit
70 ns, 80 ns, 90 ns, 100 ns, 110 ns
1024 Kbit x 8 (8 Mbit),
2048 Kbit x 8 (16 Mbit)
512 Kbit x 16 (8 Mbit),
1024 Kbit x 16 (16 Mbit),
2048 Kbit x 16 (32 Mbit),
4096 Kbit x 16 (64 Mbit)
Reference
Section 6.2, Section
7.2
Section 4.2, 4.4
Section 4.2, 4.4
Table 27
Section 8.1
Section 3.2
18 Aug 2005
8
Intel® Advanced Boot Block Flash Memory (B3)
Order Number: 290580, Revision: 020
Datasheet
www.DataSheet4U.com
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Table 6.
16-Mbit, 32-Mbit, and 64-Mbit Word-Wide Memory Addressing Map (Sheet 2 of 6)
16-Mbit, 32-Mbit, and 64-Mbit Word-Wide Memory Addressing
Top Boot
Bottom Boot
Size
(KW)
16 Mbit
32 B0000-B7FFF
32 A8000-AFFFF
32 A0000-A7FFF
32 98000-9FFFF
32 90000-97FFF
32 88000-8FFFF
32 80000-87FFF
32 78000-7FFFF
32 70000-77FFF
32 68000-6FFFF
32 60000-67FFF
32 58000-5FFFF
32 50000-57FFF
32 48000-4FFFF
32 40000-47FFF
32 38000-3FFFF
32 30000-37FFF
32 28000-2FFFF
32 20000-27FFF
32 Mbit
1B0000-
1B7FFF
1A8000-
1AFFFF
1A0000-
1A7FFF
198000-
19FFFF
190000-
197FFF
188000-
18FFFF
180000-
187FFF
178000-
17FFFF
170000-
177FFF
168000-
16FFFF
160000-
167FFF
158000-
15FFFF
150000-
157FFF
148000-
14FFFF
140000-
147FFF
138000-
13FFFF
130000-
137FFF
128000-
12FFFF
120000-
127FFF
64 Mbit
Size
(KW)
3B0000-3B7FFF 32
3A8000-3AFFFF 32
3A0000-3A7FFF 32
398000-39FFFF 32
390000-397FFF 32
388000-38FFFF 32
380000-387FFF 32
378000-37FFFF 32
370000-377FFF 32
368000-36FFFF 32
360000-367FFF 32
358000-35FFFF 32
350000-357FFF 32
348000-34FFFF 32
340000-347FFF 32
338000-33FFFF 32
330000-337FFF 32
328000-32FFFF 32
320000-327FFF 32
32 18000-1FFFF 118000-11FFFF 318000-31FFFF 32
32 10000-17FFF 110000-117FFF 310000-317FFF 32
16 Mbit
32 Mbit
64 Mbit
378000-37FFFF
370000-377FFF
368000-36FFFF
360000-367FFF
358000-35FFFF
350000-357FFF
348000-34FFFF
340000-347FFF
338000-33FFFF
330000-337FFF
328000-32FFFF
320000-327FFF
318000-31FFFF
310000-317FFF
308000-30FFFF
300000-307FFF
2F8000-
2FFFFF
2F0000-
2F7FFF
2E8000-
2EFFFF
2E0000-
2E7FFF
2D8000-
2DFFFF
18 Aug 2005
16
Intel® Advanced Boot Block Flash Memory (B3)
Order Number: 290580, Revision: 020
Datasheet
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页数 | 70 页 | ||
下载 | [ JS28F160B3.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
JS28F160B3 | (JS28Fxxx) Advanced Boot Block Flash Memory | Intel |
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