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PDF ( 数据手册 , 数据表 ) JS28F16

零件编号 JS28F16
描述 (JS28Fxxx) Advanced Boot Block Flash Memory
制造商 Intel
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JS28F16 数据手册, 描述, 功能
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Intel® Advanced Boot Block Flash
Memory (B3)
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Datasheet
Product Features
Flexible SmartVoltage Technology
— 2.7 V – 3.6 V read/program/erase
— 12 V VPP fast production programming
1.65 V – .5 V or 2.7 V – 3.6 V I/O option
— Reduces overall system power
High Performance
— 2.7 V – 3.6 V: 70 ns max access time
Optimized Block Sizes
— Eight 8-KB blocks for data, top or
bottom locations
— Up to 127 x 64-KB blocks for code
Block Locking
— VCC-level control through Write Protect
WP#
Low Power Consumption
— 9 mA typical read current
Absolute Hardware-Protection
— VPP = GND option
— VCC lockout voltage
Extended Temperature Operation
— –40 °C to +85 °C
Automated Program and Block Erase
— Status registers
Intel® Flash Data Integrator Software
—Flash Memory Manager
—System Interrupt Manager
—Supports parameter storage, streaming
data (for example, voice)
Extended Cycling Capability
—Minimum 100,000 block erase cycles
Automatic Power Savings Feature
—Typical ICCS after bus inactivity
Standard Surface Mount Packaging
—48-Ball CSP packages
—40-Lead and 48-Lead TSOP packages
Density and Footprint Upgradeable for
common package
—8-, 16-, 32-, and 64-Mbit densities
ETOX™ VIII (0.13 µm) Flash
Technology
—16-Mbit and 32-Mbit densities
ETOX™ VII (0.18 µm) Flash Technology
—16-, 32-, and 64-Mbit densities
ETOX ™ VI (0.25µm) Flash Technology
—8-, 16-, and 32-Mbit densities
Bo not use the x8 option for new designs
The Intel® Advanced Boot Block Flash Memory (B3) device, manufactured on the Intel 0.13 µm
and 0.18 µm technologies, is a feature-rich solution at a low system cost. The B3 device in x16 is
available in 48-lead TSOP and 48-ball CSP packages. The x8 option of this product family is
available only in 40-lead TSOP and 48-ball µBGA* packages. For additional information about
this product family, see the Intel website: http://www.intel.com/design/flash.
Notice: This specification is subject to change without notice. Verify with your local Intel sales
office that you have the latest datasheet before finalizing a design.
Order Number: 290580, Revision: 020
18 Aug 2005







JS28F16 pdf, 数据表
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28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
1.2 Conventions
Table 2.
2.0
Conventions
Convention
Description
Pin or signal
Group Membership Brackets
Set
Clear:
Block
Main Block
Parameter Block
Used interchangeably to refer to the external signal connections on the
package.
Note: For a chip scale package (CSP), the term ball is used in place of pin.
Square brackets designate group membership or define a group of signals
with similar function (for example, A[21:1], SR[4:1])
When referring to registers, the term set means the bit is a logical 1.
When referring to registers, the term clear means the bit is a logical 0.
A group of bits (or words) that erase simultaneously using one block erase
instruction.
A block that contains 32 Kwords.
A block that contains 4 Kwords.
Functional Overview
The B3 flash memory device features the following:
Enhanced blocking for easy segmentation of code and data or additional design flexibility.
Program Suspend to Read command.
VCCQ input of 1.65 V to 2.5 V or 2.7 V to 3.6 V on all I/Os. See Figure 1 through Figure 4 for
pinout diagrams and VCCQ location.
Maximum program and erase time specification for improved data storage.
Table 3.
B3 Device Feature Summary (Sheet 1 of 2)
Feature
28F008B3, 28F016B3
28F800B3, 28F160B3,
28F320B3(3), 28F640B3
VCC Read Voltage
VCCQ I/O Voltage
VPP Program/Erase Voltage
Bus Width
Speed
Memory Arrangement
2.7 V– 3.6 V
1.65 V–2.5 V or 2.7 V– 3.6 V
2.7 V– 3.6 V or 11.4 V– 12.6 V
8 bit 16 bit
70 ns, 80 ns, 90 ns, 100 ns, 110 ns
1024 Kbit x 8 (8 Mbit),
2048 Kbit x 8 (16 Mbit)
512 Kbit x 16 (8 Mbit),
1024 Kbit x 16 (16 Mbit),
2048 Kbit x 16 (32 Mbit),
4096 Kbit x 16 (64 Mbit)
Reference
Section 6.2, Section
7.2
Section 4.2, 4.4
Section 4.2, 4.4
Table 27
Section 8.1
Section 3.2
18 Aug 2005
8
Intel® Advanced Boot Block Flash Memory (B3)
Order Number: 290580, Revision: 020
Datasheet







JS28F16 equivalent, schematic
www.DataSheet4U.com
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Table 6.
16-Mbit, 32-Mbit, and 64-Mbit Word-Wide Memory Addressing Map (Sheet 2 of 6)
16-Mbit, 32-Mbit, and 64-Mbit Word-Wide Memory Addressing
Top Boot
Bottom Boot
Size
(KW)
16 Mbit
32 B0000-B7FFF
32 A8000-AFFFF
32 A0000-A7FFF
32 98000-9FFFF
32 90000-97FFF
32 88000-8FFFF
32 80000-87FFF
32 78000-7FFFF
32 70000-77FFF
32 68000-6FFFF
32 60000-67FFF
32 58000-5FFFF
32 50000-57FFF
32 48000-4FFFF
32 40000-47FFF
32 38000-3FFFF
32 30000-37FFF
32 28000-2FFFF
32 20000-27FFF
32 Mbit
1B0000-
1B7FFF
1A8000-
1AFFFF
1A0000-
1A7FFF
198000-
19FFFF
190000-
197FFF
188000-
18FFFF
180000-
187FFF
178000-
17FFFF
170000-
177FFF
168000-
16FFFF
160000-
167FFF
158000-
15FFFF
150000-
157FFF
148000-
14FFFF
140000-
147FFF
138000-
13FFFF
130000-
137FFF
128000-
12FFFF
120000-
127FFF
64 Mbit
Size
(KW)
3B0000-3B7FFF 32
3A8000-3AFFFF 32
3A0000-3A7FFF 32
398000-39FFFF 32
390000-397FFF 32
388000-38FFFF 32
380000-387FFF 32
378000-37FFFF 32
370000-377FFF 32
368000-36FFFF 32
360000-367FFF 32
358000-35FFFF 32
350000-357FFF 32
348000-34FFFF 32
340000-347FFF 32
338000-33FFFF 32
330000-337FFF 32
328000-32FFFF 32
320000-327FFF 32
32 18000-1FFFF 118000-11FFFF 318000-31FFFF 32
32 10000-17FFF 110000-117FFF 310000-317FFF 32
16 Mbit
32 Mbit
64 Mbit
378000-37FFFF
370000-377FFF
368000-36FFFF
360000-367FFF
358000-35FFFF
350000-357FFF
348000-34FFFF
340000-347FFF
338000-33FFFF
330000-337FFF
328000-32FFFF
320000-327FFF
318000-31FFFF
310000-317FFF
308000-30FFFF
300000-307FFF
2F8000-
2FFFFF
2F0000-
2F7FFF
2E8000-
2EFFFF
2E0000-
2E7FFF
2D8000-
2DFFFF
18 Aug 2005
16
Intel® Advanced Boot Block Flash Memory (B3)
Order Number: 290580, Revision: 020
Datasheet










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