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PDF ( 数据手册 , 数据表 ) DBT137F-600

零件编号 DBT137F-600
描述 Triacs
制造商 DnI
LOGO DnI LOGO 


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DBT137F-600 数据手册, 描述, 功能
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DBT137F-600
UL No. E256958
Triac / Sensitive Gate
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 8 A )
High Commutation dv/dt
Sensitive Gate Triggering 3 Mode
( IGT = 10mA)
Isolation Voltage ( VISO = 2500V AC )
General Description
Symbol
2.T2
1.T1
3.Gate
BVDRM = 600V
IT(RMS) = 8 A
ITSM = 77 A
TO-220F
This device is fully isolated package suitable for sensitive
gate triggering , direct coupling to TTL, HTL, CMOS and
application such as various logic functions,medium power AC
switching applications, such as fan speed control, lighting
controllers and home appliance equipment.
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I2t for fusing
Sine wave, 50 to 60 Hz,Gate Open
TC = 76 °C
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
t =10ms
PGM
PG(AV)
IGM
VGM
VISO
TJ
TSTG
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Isolation Breakdown Voltage(R.M.S.)
Operating Junction Temperature
Storage Temperature
TC =76 °C, Pulse width 1.0us
Over any 20ms period
tp = 20us, TJ=125°C
tp = 20us, TJ=125°C
A.C. 1 minute
Ratings
600
8.0
70/77
24
5.0
0.5
2.0
10
2500
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A2s
W
W
A
V
V
°C
°C
July, 2005. Rev. 1
copyright@ D&I Semiconductor Co., Ltd., All rights reserved.
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