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零件编号 | DBT152F-600 | ||
描述 | Standard Gate SCR | ||
制造商 | DnI | ||
LOGO | |||
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DBT152F-600
Standard Gate
Silicon Controlled -
Rectifiers
Symbol
2. Anode
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 20 A )
Low On-State Voltage (1.5V(Typ.)@ ITM)
Isolation Voltage ( VISO = 2500V AC )
1.Cathode
3.Gate
General Description
Standard gate triggering thyristor is fully isolated package suitable
for the application where requiring high bidirectional blocking volt-
age capability and also suitable for over voltage protection ,motor
control circuit in power tool, inrush current limit circuit and heating
control system.
BVDRM = 600V
IT(RMS) = 20 A
ITSM = 220 A
TO-220F
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
sine wave,50 to 60Hz,gate open
half sine wave : TC = 62 °C
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
I2t I2t for Fusing
t = 8.3ms
di/dt Critical rate of rise of on-state current
PGM
Forward Peak Gate Power Dissipation
TC = 62 °C, pulse width 1.0
PG(AV)
Forward Average Gate Power Dissipation TC = 62 °C,pulse width 1.0
IFGM
Forward Peak Gate Current
TC = 62 °C, pulse width 1.0
VRGM
VISO
TJ
TSTG
Reverse Peak Gate Voltage
Isolation Breakdown Voltage(R.M.S.)
Operating Junction Temperature
Storage Temperature
TC = 62 °C, pulse width 1.0
A.C. 1 minute
June , 2005. Rev.0
copyright @ D&I Semiconductor Co., Ltd., All rights reserved.
Ratings
600
12.7
20
220
242
50
20
0.5
5
5
2500
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A
A2s
A/
W
W
A
V
V
°C
°C
1/5
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页数 | 5 页 | ||
下载 | [ DBT152F-600.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
DBT152F-600 | Standard Gate SCR | DnI |
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