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零件编号 | GM2310 | ||
描述 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
制造商 | GTM | ||
LOGO | |||
1 Page
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Pb Free Plating Product
ISSUED DATE :2006/01/20
REVISED DATE :
GM2310
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
60V
90m
3A
Description
The GM2310 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The GM2310 is universally used for all commercial-industrial surface mount applications.
Features
*Simple Drive Requirement
*Small Package Outline
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4 4.6
4.05 4.25
1.50 1.70
1.30 1.50
2.40 2.60
0.89 1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5°TYP.
0.70 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS@4.5V
Continuous Drain Current3, VGS@4.5V
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Ratings
60
±20
3.0
2.3
10
1.5
0.01
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
Value
83.3
Unit
/W
GM2310
Page: 1/4
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页数 | 4 页 | ||
下载 | [ GM2310.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
GM2310 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
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