|
|
零件编号 | SPI08N50C3 | ||
描述 | Cool MOS Power Transistor | ||
制造商 | Infineon Technologies | ||
LOGO | |||
1 Page
www.DataSheet4U.com
Final data
SPP08N50C3, SPI08N50C3
SPA08N50C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
560
0.6
7.6
V
Ω
A
• Periodic avalanche rated
P-TO220-3-31 P-TO262-3-1 P-TO220-3-1
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
P-TO220-3-31
1 23
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP08N50C3
SPI08N50C3
SPA08N50C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4567
P-TO262-3-1 Q67040-S4568
P-TO220-3-31 Q67040-S4576
Marking
08N50C3
08N50C3
08N50C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=7.6A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
SPP_I
SPA
7.6
4.6
22.8
230
7.61)
4.61)
22.8
230
Unit
A
A
mJ
0.5 0.5
7.6 7.6
±20 ±20
±30 ±30
83 32
-55...+150
A
V
W
°C
Page 1
2003-06-27
www.DataSheet4U.com
Final data
SPP08N50C3, SPI08N50C3
SPA08N50C3
13 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
10 2 SPP08N50C3
A
14 Avalanche SOA
IAR = f (tAR)
par.: Tj ≤ 150 °C
8
A
10 1
6
5
T j(START)=25°C
4
10 0
10 -1
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
15 Avalanche energy
EAS = f (Tj)
par.: ID = 5.5 A, VDD = 50 V
260
mJ
3
Tj(START)=125°C
2
1
010 -3 10 -2 10 -1 10 0 10 1 10 2
µs 10 4
tAR
16 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
SPP08N50C3
600
V
220
200
180
160
140
120
100
80
60
40
20
020 40 60 80 100 120 °C 160
Tj
570
560
550
540
530
520
510
500
490
480
470
460
450-60
-20
20
60 100 °C
180
Tj
Page 8
2003-06-27
|
|||
页数 | 13 页 | ||
下载 | [ SPI08N50C3.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
SPI08N50C3 | Cool MOS Power Transistor | Infineon Technologies |
SPI08N50C3 | Cool MOS Power Transistor | Infineon Technologies |
零件编号 | 描述 | 制造商 |
STK15C88 | 256-Kbit (32 K x 8) PowerStore nvSRAM | Cypress Semiconductor |
NJM4556 | DUAL HIGH CURRENT OPERATIONAL AMPLIFIER | New Japan Radio |
EL1118-G | 5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
DataSheet8.cn | 2020 | 联系我们 | 搜索 | Simemap |