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零件编号 | 3LN02N | ||
描述 | Ultrahigh-Speed Switching Applications | ||
制造商 | Sanyo Semicon Device | ||
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1 Page
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Features
• Low ON resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
3LN02N
N-Channel Silicon MOSFET
3LN02N
Ultrahigh-Speed Switching Applications
Package Dimensions
unit : mm
2178
5.0 [3LN02N]
4.0 4.0
0.45
0.5
0.45 0.44
Specifications
Absolute Maximum Ratings at Ta=25°C
123
1.3 1.3
1 : Source
2 : Drain
3 : Gate
SANYO : NP
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Ratings
30
±10
0.3
1.2
0.4
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : YD
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=100µA
VDS=10V, ID=150mA
min
30
0.4
0.4
Ratings
typ
max
Unit
V
10 µA
±10 µA
1.3 V
0.56
S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71000 TS IM TA-2952 No.6549-1/4
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页数 | 4 页 | ||
下载 | [ 3LN02N.PDF 数据手册 ] |
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