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零件编号 | GE70L02 | ||
描述 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
制造商 | GTM | ||
LOGO | |||
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Pb Free Plating Product
ISSUED DATE :2005/03/01
REVISED DATE :2005/12/02B
GE70L02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
25V
9m
66A
Description
The GE70L02 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The through-hole version (TO-220) is available for low-profile applications and suited for low voltage
applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Low Gate Charge
*Fast Switching
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @TC=25
ID @TC=100
IDM
Total Power Dissipation
Linear Derating Factor
PD @TC=25
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-case
Rthj-amb
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
25
±20
66
42
210
66
0.53
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
1.9
62
Unit
/W
/W
GE70L02
Page: 1/5
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页数 | 5 页 | ||
下载 | [ GE70L02.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
GE70L02 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
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