DataSheet8.cn


PDF ( 数据手册 , 数据表 ) GE2026

零件编号 GE2026
描述 NPN EPITAXIAL PLANAR TRANSISTOR
制造商 GTM
LOGO GTM LOGO 


1 Page

No Preview Available !

GE2026 数据手册, 描述, 功能
www.DataSheet4U.com
ISSUED DATE :2005/09/05
REVISED DATE :
GE2026
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GE2026 is designed for general purpose application.
Features
Low Collector Saturation Voltage : VCE (sat) =1.0V (Max.) @ IC=2A, IB=0.2A,
Package Dimensions
Absolute Maximum Ratings (TA=25 )
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Base Current
IB
Total Device
Dissipation
TA=25
TC=25
PD
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
60
60
7
3
0.5
2
20
150
-55 ~ +150
Unit
V
V
V
A
A
W
W
Electrical Characteristics (TA = 25
Symbol
Min.
Typ.
BVCBO
60 -
BVCEO
60 -
BVEBO
7-
ICBO
--
IEBO
--
*VCE(sat)
--
*VBE(on)
--
*hFE1
100 -
*hFE2
20 -
fT - 30
Cob - 35
ton (Turn-on Time)
-
0.65
tstg (Storage Time)
-
1.3
tf (Fall Time)
- 0.65
unless otherwise noted)
Max.
Unit
Test Conditions
- V IC=100uA, IE=0
- V IC=50mA, IB=0
- V IE=100uA, IC=0
100 uA VCB=60V, IE=0
100 uA VEB=7V, IC=0
1.0 V IC=2A, IB=0.2A
1.0 V VCE=5V, IC=0.5A
320 VCE=5V, IC=0.5A
- VCE=5V, IC=3A
- MHz VCE=5V, IC=0.5A
- pF VCB=10V, IE=0, f=1MHz
-
- uS See specified test circuit
-
*Pulse Test: Pulse Width 380 s, Duty Cycle
2%
GE2026
Page: 1/3












页数 3 页
下载[ GE2026.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
GE2026NPN EPITAXIAL PLANAR TRANSISTORGTM
GTM

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap