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PDF ( 数据手册 , 数据表 ) NP100P06PDG

零件编号 NP100P06PDG
描述 MOS FIELD EFFECT TRANSISTOR
制造商 NEC
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NP100P06PDG 数据手册, 描述, 功能
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP100P06PDG
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER
NP100P06PDG-E1-AY Note
NP100P06PDG-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE
TO-263 (MP-25ZP)
FEATURES
Super low on-state resistance
RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 50 A)
RDS(on)2 = 7.8 mΩ MAX. (VGS = 4.5 V, ID = 50 A)
High current rating: ID(DC) = m100 A
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
60
m20
m100
m300
200
1.8
175
55 to +175
64
420
Notes 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 0 V
V
V
A
A
W
W
°C
°C
A
mJ
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.75
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18693EJ3V0DS00 (3rd edition)
Date Published May 2007 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007












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