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零件编号 | GC2301 | ||
描述 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
制造商 | GTM | ||
LOGO | |||
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Pb Free Plating Product
ISSUED DATE :2005/05/24
REVISED DATE :
GC2301
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-20V
130m
-2.6A
Description
The GC2301 provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
The GC2301 is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Fast Switching
Package Dimensions
D
E
S1
TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Ratings
-20
±12
-2.6
-2.1
-10
1.38
0.01
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
90
Unit
/W
GC2301
Page: 1/4
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页数 | 4 页 | ||
下载 | [ GC2301.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
GC2301 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
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