DataSheet8.cn


PDF ( 数据手册 , 数据表 ) G9014

零件编号 G9014
描述 NPN EPITAXIAL TRANSISTOR
制造商 GTM
LOGO GTM LOGO 


1 Page

No Preview Available !

G9014 数据手册, 描述, 功能
www.DataSheet4U.com
G9014
NPN EPITAXIAL TRANSISTOR
Description
The G9014 is designed for general purpose amplifier applications.
Package Dimensions
D
E
S1
TO-92
ISSUED DATE :2004/11/10
REVISED DATE :
S E A T IN G
PLANE
b1
e1
e
b
C
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Characteristics at
Symbol
BVCBO
BVCEO
Min.
50
45
BVEBO
ICBO
IEBO
5
-
-
VCE(sat)
VBE(sat)
VBE(on)
-
-
0.58
hFE 100
fT 150
Cob -
Ta = 25
Typ.
-
-
-
-
-
0.14
0.84
0.63
280
270
2.20
Max.
-
-
-
50
50
0.3
1
0.7
1000
-
3.5
Classification Of hFE
Rank
hFE
B
100 - 300
C
200-600
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Ratings
+150
-55 ~ +150
50
45
5
100
450
Unit
V
V
V
mA
mW
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=100uA , IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
IC=100mA, IB=5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCB=10V, f=1MHz, IE=0
D
400-1000
1/3












页数 3 页
下载[ G9014.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
G9013.3 V 300MA LOW DROPOUT REGULATORETC
ETC
G9012PNP EPITAXIAL TRANSISTORGTM
GTM
G9013NPN EPITAXIAL TRANSISTORGTM
GTM
G9014NPN EPITAXIAL TRANSISTORGTM
GTM

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap