|
|
零件编号 | G9013 | ||
描述 | NPN EPITAXIAL TRANSISTOR | ||
制造商 | GTM | ||
LOGO | |||
1 Page
www.DataSheet4U.com
G9013
NPN EPITAXIAL TRANSISTOR
Description
The G9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.
Package Dimensions
D
E
S1
TO-92
ISSUED DATE :2004/11/18
REVISED DATE :
S E A T IN G
PLANE
b1
e1
e
b
C
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Characteristics at
Symbol
BVCBO
BVCEO
Min.
40
20
BVEBO
ICBO
IEBO
5
-
-
VCE(sat)
VBE(sat)
VBE(on)
-
-
-
hFE1
hFE2
fT
112
40
100
Cob -
Ta = 25
Typ.
-
-
-
-
-
-
-
-
180
-
-
-
Max.
-
-
-
100
100
0.6
1.2
0.9
300
-
-
8
Classification Of hFE1
Rank
hFE1
G
112 - 166
H
144 - 202
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Ratings
+150
-55 ~ +150
40
20
5
500
625
Unit
V
V
V
mA
mW
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=100uA , IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=25V, IE=0
VEB=3V, IC=0
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=500mA
VCE=1V, IC=10mA, f=100MHz
VCB=10V, f=1MHz
L
176 - 300
1/3
|
|||
页数 | 3 页 | ||
下载 | [ G9013.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
G901 | 3.3 V 300MA LOW DROPOUT REGULATOR | ETC |
G9012 | PNP EPITAXIAL TRANSISTOR | GTM |
G9013 | NPN EPITAXIAL TRANSISTOR | GTM |
G9014 | NPN EPITAXIAL TRANSISTOR | GTM |
零件编号 | 描述 | 制造商 |
STK15C88 | 256-Kbit (32 K x 8) PowerStore nvSRAM | Cypress Semiconductor |
NJM4556 | DUAL HIGH CURRENT OPERATIONAL AMPLIFIER | New Japan Radio |
EL1118-G | 5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
DataSheet8.cn | 2020 | 联系我们 | 搜索 | Simemap |