DataSheet8.cn


PDF ( 数据手册 , 数据表 ) G6718

零件编号 G6718
描述 NPN EPITAXIAL PLANAR TRANSISTOR
制造商 GTM
LOGO GTM LOGO 


1 Page

No Preview Available !

G6718 数据手册, 描述, 功能
www.DataSheet4U.com
ISSUED DATE :2005/09/05
REVISED DATE :
G6718
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The G6718 is designed for general purpose medium power amplifier and switching applications.
Features
High Power: 850mW
High Current: 1A
Package Dimensions
D
E
S1
TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
Absolute Maximum Ratings (TA=25 )
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse)
IC
Base Current
IB
Total Device Dissipation
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Ratings
100
100
5
1
2
200
850
150
-55 ~ +150
Unit
V
V
V
A
A
mA
mW
Electrical Characteristics (TA = 25 unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
100 - - V IC=100uA, IE=0
BVCEO
100 - - V IC=1mA, IB=0
BVEBO
5 - - V IE=10uA, IC=0
ICBO
- - 100 nA VCB=80V, IE=0
*VCE(sat)
- - 350 mV IC=350mA, IB=35mA
*hFE1
80 -
-
VCE=1V, IC=50mA
*hFE2
50 - 300
VCE=1V, IC=250mA
*hFE3
20 -
-
VCE=1V, IC=500mA
fT
50 -
- MHz VCE=10V, IE=50mA, f=100MHz
Cob - - 20 pF VCB=10V, IE=0, f=1MHz
Classification Of hFE2
*Pulse Test: Pulse Width 380 s, Duty Cycle
Rank
Range
A
50 ~ 115
B
95 ~ 300
2%
1/2












页数 2 页
下载[ G6718.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
G671(G670 / G671) Microprocessor Reset ICGMT
GMT
G6718NPN EPITAXIAL PLANAR TRANSISTORGTM
GTM

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap