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零件编号 | G3J14 | ||
描述 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
制造商 | GTM | ||
LOGO | |||
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Pb Free Plating Product
ISSUED DATE :2005/03/04
REVISED DATE :
G3J14
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
85m
-3.7A
Description
The G3J14 provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
The G3J14 is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
Features
*Low On-resistance
*High-speed switching
*Simple Drive Requirement
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
-30
20
-3.7
-3.0
-10
1.38
0.01
-55 ~ +150
Ratings
90
Unit
V
V
A
A
A
W
W/
Unit
/W
1/4
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页数 | 4 页 | ||
下载 | [ G3J14.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
G3J14 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
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