DataSheet8.cn


PDF ( 数据手册 , 数据表 ) N32T1630C1E

零件编号 N32T1630C1E
描述 32Mb Ultra-Low Power Asynchronous CMOS PSRAM
制造商 NanoAmp Solutions
LOGO NanoAmp Solutions LOGO 


1 Page

No Preview Available !

N32T1630C1E 数据手册, 描述, 功能
www.DataSheet4U.com
NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
N32T1630C1E
32Mb Ultra-Low Power Asynchronous CMOS PSRAM
2M x 16 bit
Overview
The N32T1630C1E is an integrated memory
device containing a 32 Mbit Pseudo Static Random
Access Memory using a self-refresh DRAM array
organized as 2,097,152 words by 16 bits. It is
designed to be identical in operation and interface
to standard 6T SRAMS. The device is designed for
low standby and operating current and includes a
power-down feature to automatically enter standby
mode. Also included are several other power
saving modes: a deep sleep mode where data is
not retained in the array and partial array refresh
mode where data is retained in a portion of the
array. Both these modes reduce standby current
drain. The device can operate over a very wide
temperature range of -25oC to +85oC.
Features
• Dual voltage for Optimum Performance:
Vccq - 2.7V to 3.3V
Vcc - 2.7V to 3.3V
• Fast Cycle Times
TACC < 60 nS
TACC < 70 nS
• Very low standby current
ISB < 120µA
• Very low operating current
Icc < 25mA
• Dual rail operation
VCCQ and VSSQ for separate I/O power rail
• Compact Space Saving BGA Package
Product Family
Part Number
Package Operating
Type
Temperature
Power
Supply
N32T1630C1EZ 48-BGA -25oC to +85oC 2.7V - 3.3V(VCC)
Speed
60ns
70ns
Standby
Operating
Current (ISB), Current (Icc),
Max Max
120 µA 3 mA @ 1MHz
Figure 1: Pin Configuration
123456
A LB OE A0 A1 A2 ZZ
B I/O8 UB A3 A4 CE I/O0
C I/O9 I/O10 A5 A6 I/O1 I/O2
D VSSQ I/O11 A17 A7 I/O3 VCC
E VCCQ I/O12 NC A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 A19 A12 A13 WE I/O7
H A18 A8
A9 A10 A11 A20
48 Pin BGA (top)
6 x 8 mm
Table 1: Pin Descriptions
Pin Name
A0-A20
WE
CE
ZZ
OE
LB
UB
I/O0-I/O15
VCC
VSS
VCCQ
VSSQ
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Deep Sleep Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Power I/O only
Ground I/O only
(DOC # 14-02-006 Rev C ECN 01-1040
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1







N32T1630C1E pdf, 数据表
NanoAmp Solutions, Inc.
N32T1630C1E
Timing Waveform of Write Cycle (WE control, ZZ = VIH)
tWC
Address
tAW
tWR
CE
LB, UB
tCW
tBW
WE
Data In
Data Out
tAS
High-Z
tWHZ
tWP
tDW tDH
Data Valid
tOW
High-Z
Timing Waveform of Write Cycle (CE Control, ZZ = VIH)
tWC
Address
tAW
CE
LB, UB
tAS tCW
tBW
tWP
tWR
WE
tDW tDH
Data In
Data Out
tWHZ
Data Valid
High-Z
(DOC # 14-02-006 Rev C ECN 01-1040
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
8














页数 14 页
下载[ N32T1630C1E.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
N32T1630C1C32Mb Ultra-Low Power Asynchronous CMOS Pseudo SRAMNanoAmp Solutions
NanoAmp Solutions
N32T1630C1E32Mb Ultra-Low Power Asynchronous CMOS PSRAMNanoAmp Solutions
NanoAmp Solutions

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap