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零件编号 | GJ3669 | ||
描述 | PNP EPITAXIAL PLANAR TRANSISTOR | ||
制造商 | GTM | ||
LOGO | |||
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ISSUED DATE :2005/08/31
REVISED DATE :2005/11/28B
GJ3669
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GJ3669 is designed for using in power amplifier applications, power switching applications.
Package Dimensions
TO-252
Absolute Maximum Ratings (TA=25 )
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Total Device Dissipation (TA=25 )
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
80
80
5
2
1.25
150
-55 ~ +150
Unit
V
V
V
A
W
Electrical Characteristics (TA = 25 unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
80 - - V IC=100uA, IE=0
BVCEO
80 - - V IC=10mA, IB=0
BVEBO
5 - - V IE=100uA, IC=0
ICBO
IEBO
- - 1 uA VCB=80V, IE=0
- - 1 uA VEB=5V, IC=0
*VCE(sat)
- 0.15 0.5 V IC=1A, IB=50mA
*VBE(sat)
- 0.9 1.2 V IC=1A, IB=50mA
*hFE1
*hFE2
70 - 240
40 -
-
VCE=2V, IC=0.5A
VCE=2V, IC=1.5A
fT - 100 - MHz VCE=2V, IE=500mA, f=100MHz
Cob - 30 - pF VCB=10V, IE=0, f=1MHz
ton (Turn-On Time)
tstg (Storage Time)
tf (Fall Time)
-
-
-
0.2 -
1.0 -
0.2 -
us VCC=30V, RL=30 ,
us
IC=1A,
IB1=-IB2=50mA,
us Duty Cycle 1%
*Pulse Test: Pulse Width 380 s, Duty Cycle
Classification Of hFE1
Rank
Range
O
70 ~ 140
Y
120 ~ 240
2%
GJ3669
Page: 1/2
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页数 | 2 页 | ||
下载 | [ GJ3669.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
GJ3669 | PNP EPITAXIAL PLANAR TRANSISTOR | GTM |
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