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零件编号 | GJ3403 | ||
描述 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
制造商 | GTM | ||
LOGO | |||
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Pb Free Plating Product
ISSUED DATE :2005/02/25
REVISED DATE :
GJ3403
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
200m
-10A
Description
The GJ3403 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The TO-252 package is universally used for commercial-industrial applications.
Features
*Simple Drive Requirement
*Lower Gate Charge
*Fast Switching
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VDS
VGS
ID @TC=25
Continuous Drain Current
Pulsed Drain Current1
ID @TC=70
IDM
Total Power Dissipation
Linear Derating Factor
PD @TC=25
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-case
Rthj-amb
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
-30
±20
-10
-8.6
-48
36.7
0.29
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
3.4
110
Unit
/W
/W
GJ3403
Page: 1/4
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页数 | 4 页 | ||
下载 | [ GJ3403.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
GJ3403 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
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