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PDF ( 数据手册 , 数据表 ) GJ3310

零件编号 GJ3310
描述 P-CHANNEL ENHANCEMENT MODE POWER MOSFET
制造商 GTM
LOGO GTM LOGO 


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GJ3310 数据手册, 描述, 功能
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Pb Free Plating Product
ISSUED DATE :2005/12/05
REVISED DATE :
GJ3310
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-20V
150m
-10A
Description
The GJ3310 provide the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage and battery power applications.
Features
*Simple Drive Requirement
*2.5V Gate Drive Capability
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
VGS
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
-20
±12
-10
-6.2
-24
25
0.01
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
5.0
110
Unit
/W
/W
GJ3310
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