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零件编号 | KHB2D0N60F1 | ||
描述 | (KHB2D0N60F1/P1) N-Channel MOS Field Effect Transistor | ||
制造商 | KEC semiconductor | ||
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TECHNICAL DATA
KHB2D0N60P1/F1
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switching mode
power supplies.
FEATURES
VDSS= 600V, ID= 2.0A
Drain-Source ON Resistance :
RDS(ON)=5.0 @VGS = 10V
Qg(typ.) = 10.9nC
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KHB2D0N60P1 KHB2D0N60F1
Drain-Source Voltage
VDSS 600 V
Gate-Source Voltage
VGSS
30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
2.0 2.0*
1.2 1.2*
8.0 8.0*
120
5.4
5.5
A
mJ
mJ
V/ns
Drain Power
Dissipation
Tc=25
Derate above25
PD
54
0.43
23 W
0.18 W/
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
2.32
5.5 /W
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-
Ambient
RthCS
RthJA
0.5
62.5
- /W
62.5 /W
* : Drain current limited by maximum junction temperature.
A
E
P
K
L
D
MM
N 123
TO-220AB
F
B
G
C
O
JQ
H
1. GATE
2. DRAIN
3. SOURCE
TO-220IS
D
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_0.1
E 3.18 +_ 0.1
F 3.3 +_0.1
G 12.57 +_ 0.2
H 0.5 +_0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 2.54 +_ 0.2
N 4.7 +_ 0.2
O 6.68 +_ 0.2
P 6.5
Q 2.76 +_ 0.2
G
2006. 1. 13
Revision No : 0
S
1/7
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页数 | 7 页 | ||
下载 | [ KHB2D0N60F1.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
KHB2D0N60F | (KHB2D0N60F/P) N-Channel MOS Field Effect Transistor | KEC semiconductor |
KHB2D0N60F1 | (KHB2D0N60F1/P1) N-Channel MOS Field Effect Transistor | KEC semiconductor |
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