|
|
零件编号 | BF1212 | ||
描述 | N-channel dual-gate MOS-FETs | ||
制造商 | NXP Semiconductors | ||
LOGO | |||
1 Page
www.DataSheet4U.com
DISCRETE SEMICONDUCTORS
DATA SHEET
BF1212; BF1212R; BF1212WR
N-channel dual-gate MOS-FETs
Product specification
2003 Nov 14
www.DataSheet4U.com
Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1212; BF1212R; BF1212WR
handbook,3h0alfpage
IG1
(µA)
20
10
MLE241
(1)
(2)
(3)
(4)
(5)
handbook, h0alfpage
gain
reduction
(dB)
−20
−40
MLE242
0
02 4 6
VG2-S (V)
(1) VGG = 5 V.
(2) VGG = 4.5 V.
(3) VGG = 4 V.
(4) VGG = 3.5 V.
(5) VGG = 3 V.
VDS = 5 V; Tj = 25 °C.
RG1 = 150 kΩ
(connected to VGG);
see Fig.21.
Fig.13 Gate 1 current as a function of gate 2
voltage; typical values.
−60
01234
VAGC (V)
VDS = 5 V; VGG = 5 V; RG1 = 150 kΩ (connected to VGG);
see Fig.21; f = 50 MHz; Tamb = 25 °C.
Fig.14 Typical gain reduction as a function of AGC
voltage.
handboo1k,2h0alfpage
Vunw
(dBµV)
110
MLE243
handbook,1h6alfpage
ID
(mA)
12
MLE244
100 8
90 4
80
0 10 20 30 40 50
gain reduction (dB)
VDS = 5 V; VGG = 5 V; RG1 = 150 kΩ (connected to VGG);
see Fig.21; f= 50 MHz; funw = 60 MHz; Tamb = 25 °C.
Fig.15 Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values.
0
0 10 20 30 40 50
gain reduction (dB)
VDS = 5 V; VGG = 5 V; RG1 = 150 kΩ (connected to VGG);
see Fig.21; f= 50 MHz; Tamb = 25 °C.
Fig.16 Drain current as a function of gain
reduction; typical values.
2003 Nov 14
8
|
|||
页数 | 15 页 | ||
下载 | [ BF1212.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
BF1210 | Dual N-channel dual gate MOSFET | NXP Semiconductors |
BF1211 | N-channel dual-gate MOS-FETs | ETC |
BF1211 | N-channel dual-gate MOS-FETs | Philips |
BF1211R | N-channel dual-gate MOS-FETs | ETC |
零件编号 | 描述 | 制造商 |
STK15C88 | 256-Kbit (32 K x 8) PowerStore nvSRAM | Cypress Semiconductor |
NJM4556 | DUAL HIGH CURRENT OPERATIONAL AMPLIFIER | New Japan Radio |
EL1118-G | 5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
DataSheet8.cn | 2020 | 联系我们 | 搜索 | Simemap |